ERROR DETECTION EVENT MECHANISM

1 . (canceled)

2 . A memory system, comprising:

a non-volatile memory device; and

a control circuit coupled with the non-volatile memory device and configured to cause the memory system to:

set a first indication indicating whether a fault condition occurs at the memory system;

enter a safe mode of operation based at least in part on setting the first indication;

receive a command to exit the safe mode of operation;

exit the safe mode of operation based at least in part on receiving the command; and

perform a recovery procedure based at least in part on exiting the safe mode of operation.

3 . The memory system of claim 2 , wherein, to set the first indication, the control circuit is further configured to cause the memory system to:

set, in a register, a first event alert bit indicating that the fault condition occurs at the memory system.

4 . The memory system of claim 2 , wherein, to set the first indication, the control circuit is further configured to cause the memory system to:

set, in a register, a second event alert bit indicating that the fault condition does not occur at the memory system.

5 . The memory system of claim 2 , wherein the control circuit is further configured to cause the memory system to:

transmit a message indicating the first indication based at least in part on setting the first indication.

6 . The memory system of claim 5 , wherein the message comprises a transaction type, a flag, a memory system identification, a command set type, a response, a status, a task tag, a memory system information, a data segment length, the first indication, or a combination thereof.

7 . The memory system of claim 2 , wherein the first indication is set in a register of the memory system.

8 . The memory system of claim 2 , wherein the control circuit is further configured to cause the memory system to:

set a second indication indicating a type of the fault condition based at least in part on setting the first indication.

9 . The memory system of claim 2 , wherein the control circuit is further configured to cause the memory system to:

clearing the first indication based at least in part on performing the recovery procedure.

10 . The memory system of claim 2 , wherein the fault condition further comprises a stuck condition of firmware of the memory system, an operating condition of the memory system that satisfies a threshold, a capacity operation of the memory system, a resource limitation of the memory system, a background operation, a temperature detection operation, a flush operation, a voltage detection operation, or a combination thereof.

11 . A memory system, comprising:

a non-volatile memory device; and

a control circuit coupled with the non-volatile memory device and configured to cause the memory system to:

transmit a message indicating a first indication whether a fault condition exists at the memory system;

set a second indication indicating a type of the fault condition based at least in part on the fault condition;

enter a safe mode of operation based at least in part on setting the second indication;

refrain from performing an operation based at least in part on entering the safe mode of operation;

exit the safe mode of operation; and

perform a recovery procedure based at least in part on exiting the safe mode of operation.

12 . The memory system of claim 11 , wherein the control circuit is further configured to cause the memory system to:

identify a fault condition of the memory system, wherein transmitting the message is based at least in part on identifying the fault condition.

13 . The memory system of claim 11 , wherein the control circuit is further configured to cause the memory system to:

receive a command to exit the safe mode of operation, wherein exiting the safe mode of operation is based at least in part on receiving the command.

14 . The memory system of claim 11 , wherein performing the recovery procedure is based at least in part on the first indication and the second indication.

15 . The memory system of claim 11 , wherein the control circuit is further configured to cause the memory system to:

enter a time-out condition based at least in part on the fault condition, wherein transmitting the message is based at least in part on entering the time-out condition.

16 . The memory system of claim 11 , wherein the control circuit is further configured to cause the memory system to:

set the first indication indicating whether the fault condition occurs at the memory system, wherein transmitting the message is based at least in part on setting the first indication.

17 . The memory system of claim 11 , wherein the first indication comprises an event alert bit.

18 . The memory system of claim 11 , wherein transmitting the message is based at least in part on setting the second indication.

19 . The memory system of claim 11 , wherein the fault condition further comprises a stuck condition of firmware of the memory system, an operating condition of the memory system that satisfies a threshold, a capacity operation of the memory system, a resource limitation of the memory system, a background operation, a temperature detection operation, a flush operation, a voltage detection operation, or a combination thereof.

20 . An apparatus, comprising:

a memory device; and

a control circuit coupled with the memory device and configured to cause the apparatus to:

set a first indication indicating whether a fault condition occurs at the apparatus;

enter a safe mode of operation based at least in part on setting the first indication;

receive a command to exit the safe mode of operation;

exit the safe mode of operation based at least in part on receiving the command; and

perform a recovery procedure based at least in part on exiting the safe mode of operation.

21 . The apparatus of claim 20 , wherein, to set the first indication, the control circuit is further configured to cause the apparatus to:

set, in a register, a first event alert bit indicating that the fault condition occurs at the apparatus.