DISPLAY DEVICE
A plurality of thin film transistors provided in a peripheral region are first staggered thin film transistors where a first channel layer configured of low-temperature polysilicon is included, and the first channel layer is not interposed between a first source electrode and a first gate electrode, and between a first drain electrode and the first gate electrode. A plurality of thin film transistors provided in a display region are second staggered thin film transistors where a second channel layer configured of an oxide semiconductor is included, and the second channel layer is not interposed between a second source electrode and a second gate electrode, and between a second drain electrode and the second gate electrode. The first thin film transistor is located below the second thin film transistor.
1 - 13 . (canceled)
14 . A display device comprising:
a pixel electrode provided in a display region configured to display an image;
a common electrode above the pixel electrode;
a light-emitting element layer between the pixel electrode and the common electrode;
a first thin film transistor coupled to the pixel electrode in the display region, the first thin film transistor including a first semiconductor layer formed of an oxide semiconductor;
a first conductive layer overlapping with the first thin film transistor, the first thin film transistor being provided between the light-emitting element layer and the first conductive layer;
a second thin film transistor provided in a peripheral region outside the display region and including a second semiconductor layer; and
a second conductive layer overlapping with the first semiconductor layer and provided in a same layer as the second semiconductor layer, the first conductive layer being provided between the first semiconductor layer and the second conductive layer.
15 . The display device according to claim 14 , wherein the second semiconductor layer is formed of polysilicon.
16 . The display device according to claim 14 , wherein no other transistor is coupled between the first thin film transistor and the pixel electrode.
17 . The display device according to claim 14 , further comprising a drive circuit provided in a peripheral region outside the display region,
wherein the second thin film transistor is included in the drive circuit.
18 . The display device according to claim 14 , wherein the second conductive layer includes polysilicon.
19 . The display device according to claim 18 , wherein the second conductive layer includes ions.
20 . The display device according to claim 14 , wherein the second conductive layer is coupled to the pixel electrode.
21 . The display device according to claim 14 , wherein the second conductive layer is coupled to the first thin film transistor.
22 . The display device according to claim 21 , wherein the second conductive layer is coupled to the pixel electrode via one of a first source electrode and a first drain electrode that are included in the first thin film transistor.
23 . The display device according to claim 14 , further comprising a third thin film transistor including a third semiconductor layer in the display region,
wherein a third gate electrode of the third thin film transistor is in a same layer as the first conductive layer, and
the third semiconductor layer is in a same layer as the second conductive layer.
24 . The display device according to claim 14 , further comprising a third thin film transistor including a third semiconductor layer in the display region,
wherein a third gate electrode of the third thin film transistor is in a same layer as the first conductive layer, and
a first gate electrode of the first thin film transistor is connected to one of a third source electrode and a third drain electrode that are included in the third thin film transistor.
25 . The display device according to claim 14 , wherein a second gate electrode of the second thin film transistor and the first conductive layer are formed of a same material.
26 . The display device according to claim 14 , wherein the pixel electrode is provided at an opposite side of the first semiconductor layer from the second semiconductor layer.
27 . A display device comprising:
a pixel electrode provided in a display region configured to display an image;
a common electrode above the pixel electrode;
a light-emitting element layer between the pixel electrode and the common electrode;
a first thin film transistor coupled to the pixel electrode in the display region, the first thin film transistor including a first semiconductor layer formed of an oxide semiconductor;
a first conductive layer overlapping with the first thin film transistor, the first thin film transistor being provided between the light-emitting element layer and the first conductive layer; and
a second thin film transistor provided in a peripheral region outside the display region and including a second semiconductor layer,
wherein the first semiconductor layer is provided between the light-emitting element layer and the second semiconductor layer in a sectional view.
28 . The display device according to claim 27 , wherein the first semiconductor layer does not overlap with the second semiconductor layer.
29 . The display device according to claim 27 , wherein a second gate electrode of the second thin film transistor is in a same layer as the first conductive layer.
30 . The display device according to claim 27 , wherein the second semiconductor layer is formed of polysilicon.
31 . The display device according to claim 27 , wherein no other transistor is coupled between the first thin film transistor and the pixel electrode.
32 . The display device according to claim 27 , further comprising a drive circuit provided in a peripheral region outside the display region,
wherein the second thin film transistor is included in the drive circuit.
33 . The display device according to claim 27 , wherein the second semiconductor layer includes polysilicon.