LIGHT EMITTING NANOCRYSTALS AND METHODS OF MAKING LIGHT EMITTING NANOCRYSTALS
A composition can include a copper containing nanocrystal.
1 - 20 . (canceled)
21 . A plurality of nanocrystals having the formula:
CuAl 5 S 8 ,
wherein the nanocrystals have a luminescence quantum yield of at least 10%.
22 . The plurality of nanocrystals of claim 21 , further comprising a zinc sulfide over coating.
23 . The plurality of nanocrystals of claim 21 , wherein the nanocrystals are defective nanocrystals.
24 . The plurality of nanocrystals of claim 21 , wherein the nanocrystals are doped with zinc.
25 . The plurality of nanocrystals of claim 21 , wherein the nanocrystals have a size of between 2 nm and 20 nm.
26 . The plurality of nanocrystals of claim 21 , wherein the nanocrystals have a size of between 3 nm and 10 nm.
27 . A semiconductor nanocrystal comprising a core including a IB-IIIA-VIA semiconductor material, wherein:
the nanocrystal has a luminescence quantum yield of at least 10%,
the group IB element is copper,
the group IIIA element is aluminum, and
the group VIA element is sulfur or selenium.
28 . The semiconductor nanocrystal of claim 27 , further comprising a zinc sulfide over coating.
29 . The semiconductor nanocrystal of claim 27 , wherein the nanocrystal is a defective nanocrystal.
30 . The semiconductor nanocrystal of claim 27 , wherein the nanocrystal is doped with zinc.
31 . The semiconductor nanocrystal of claim 27 , wherein the nanocrystal has a size of between 2 nm and 20 nm.
32 . The semiconductor nanocrystal of claim 27 , wherein the nanocrystal has a size of between 3 nm and 10 nm.
33 . The semiconductor nanocrystal of claim 27 , wherein the group VIA element is sulfur.
34 . A semiconductor nanocrystal comprising a core including a IB-IIIA-VIA semiconductor material, wherein:
the semiconductor nanocrystal has a peak emission wavelength corresponding to blue electromagnetic radiation,
the group IB element is copper,
the group IIIA element is aluminum, and
the group VIA element is sulfur or selenium.
35 . The semiconductor nanocrystal of claim 34 , further comprising a zinc sulfide over coating.
36 . The semiconductor nanocrystal of claim 34 , wherein the nanocrystal is a defective nanocrystal.
37 . The semiconductor nanocrystal of claim 34 , wherein the nanocrystal is doped with zinc.
38 . The semiconductor nanocrystal of claim 34 , wherein the nanocrystal has a size of between 2 nm and 20 nm.
39 . The semiconductor nanocrystal of claim 34 , wherein the nanocrystal has a size of between 3 nm and 10 nm.
40 . The semiconductor nanocrystal of claim 34 , wherein the group VIA element is sulfur.