Heat removing layer surrounding a transistor
A semiconductor circuit structure includes a semiconductor substrate with an original semiconductor surface, an active region within the semiconductor substrate, and a transistor formed based on the active region. The transistor includes a gate structure, a first spacer neighboring to a first sidewall of the gate structure, and a second spacer neighboring to a second sidewall of the gate structure. Wherein a thermal conductivity of the first spacer or the second spacer includes is higher than the thermal conductivity of silicon nitride (Si 3 N 4 ).
1 . A semiconductor circuit structure comprising:
a semiconductor substrate with an original semiconductor surface;
an active region within the semiconductor substrate; and
a transistor formed within the active region, the transistor comprising:
a gate structure with a gate conductive layer;
a first spacer neighboring to a first sidewall of the gate structure; and
a second spacer neighboring to a second sidewall of the gate structure; and
a shallow trench isolation (STI) region comprising a heat removing layer surrounding the transistor; wherein a top surface of the heat removing layer is higher than that of the gate conductive layer, and a thermal conductivity of the heat removing layer is higher than that of SiO 2 .
2 . The semiconductor circuit structure according to claim 1 , wherein the transistor is a fin field-effect transistor (FinFET), a gate-all-around (GAA) transistor, a recessed gate (RG) transistor or a complementary field-effect transistor (CFET).
3 . The semiconductor circuit structure according to claim 1 , wherein the heat removing layer is within the STI region and isolated from the semiconductor substrate.
4 . The semiconductor circuit structure according to claim 3 , wherein:
a dielectric isolation layer is over the heat removing layer.
5 . The semiconductor circuit structure according to claim 1 , wherein the heat removing layer is located close to the source region or the drain region.
6 . The semiconductor circuit structure according to claim 1 , wherein the heat removing layer is made of a material selected from a group consisting of SiC, h-BN, AlN and the arbitrary combinations thereof.
7 . A semiconductor circuit structure comprising:
a semiconductor substrate with an original semiconductor surface;
an active region within the semiconductor substrate; and
a transistor formed within the active region, the transistor comprising:
a gate structure with a gate conductive layer;
a first spacer neighboring to a first sidewall of the gate structure; and
a second spacer neighboring to a second sidewall of the gate structure;
a channel region covered by the gate structure;
a source structure coupled to a first terminal of the channel region; and
a drain structure coupled to a second terminal of the channel region; wherein the first spacer is between the gate structure and the source structure, and the second spacer is between the gate structure and the drain structure; and
a heat removing layer surrounding the transistor; wherein a top surface of the heat removing layer is higher than that of the gate conductive layer, and a thermal conductivity of the heat removing layer is higher than that of SiO 2 .
8 . The semiconductor circuit structure according to claim 7 , wherein the source structure comprises a first lightly doped drain (LDD) region and a first heavily doped region, and the first spacer covers the first LDD region or the first heavily doped region of the source structure.
9 . The semiconductor circuit structure according to claim 8 , wherein the drain structure comprises a second LDD region and a second heavily doped region, and the second spacer covers the second LDD region or the second heavily doped region of the drain structure.
10 . A semiconductor circuit structure comprising:
a semiconductor substrate with an original semiconductor surface;
an active region within the semiconductor substrate; and
a transistor formed within the active region, the transistor comprising:
a gate structure with a gate conductive layer;
a first spacer neighboring to a first sidewall of the gate structure; and
a second spacer neighboring to a second sidewall of the gate structure; and
a heat removing layer surrounding the transistor; wherein a top surface of the heat removing layer is higher than that of the gate conductive layer, and a thermal conductivity of the heat removing layer is higher than that of SiO 2 ;
wherein the heat removing layer is undoped polysilicon or large-grain silicon.
11 . A semiconductor circuit structure comprising:
a semiconductor substrate with an original semiconductor surface;
an active region within the semiconductor substrate; and
a transistor formed within the active region, the transistor comprising:
a gate structure with a gate conductive layer;
a first spacer neighboring to a first sidewall of the gate structure; and
a second spacer neighboring to a second sidewall of the gate structure;
a heat removing layer surrounding the transistor; wherein a top surface of the heat removing layer is higher than that of the gate conductive layer, and a thermal conductivity of the heat removing layer is higher than that of SiO 2 ; and
a dielectric lying layer covering sidewalls of the heat removing layer to electrically isolated the heat removing layer from the semiconductor substrate.