POLISHING COMPOSITION FOR SEMICONDUCTOR PROCESS AND METHOD FOR POLISHING SUBSTRATE USING SAME
The polishing composition for semiconductor process includes polishing particles, wherein an Rps value calculated by the following Formula 1 is 0.5 to 2: Rps = Ap As [ Formula 1 ] in [Formula 1], Ap is a specific surface area of a micropore of the polishing particles, and As is a specific surface area of an external surface of the polishing particles.
1 . A polishing composition for semiconductor process comprising polishing particles,
wherein an Rps value calculated by the following Formula 1 is 0.5 to 2:
Rps
=
Ap
As
[
Formula
1
]
in [Formula 1],
Ap is a specific surface area of a micropore of the polishing particles, and
As is a specific surface area of an external surface of the polishing particles.
2 . The polishing composition for semiconductor process of claim 1 ,
wherein the Ap is 25 m 2 /g to 50 m 2 /g.
3 . The polishing composition for semiconductor process of claim 1 ,
wherein the As is 10 m 2 /g to 30 m 2 /g.
4 . The polishing composition for semiconductor process of claim 1 ,
wherein a BET specific surface area of the polishing particles is 30 m 2 /g to 80 m 2 /g.
5 . The polishing composition for semiconductor process of claim 1 ,
wherein a specific pore volume of the micropore of the polishing particles is 0.011 cm 3 /g to 0.2 cm 3 /g.
6 . The polishing composition for semiconductor process of claim 1 ,
wherein the polishing particles comprise primary particles having an average diameter of 15 nm to 40 nm.
7 . The polishing composition for semiconductor process of claim 6 ,
wherein the polishing particles further comprise secondary particles having an average diameter of 120 nm or more in an amount of 10 wt % or less.
8 . The polishing composition for semiconductor process of claim 6 ,
wherein the polishing particles further comprise secondary particles having an average diameter of less than 50 nm in an amount of 10 wt % or less.
9 . The polishing composition for semiconductor process of claim 1 ,
wherein the polishing composition comprises the polishing particles in an amount of 4 wt % to 12 wt %.
10 . The polishing composition for semiconductor process of claim 1 ,
wherein a pH of the polishing composition is 8 to 12.
11 . A method for manufacturing a substrate, comprising:
a process of polishing the substrate using the polishing composition for semiconductor process of claim 1 as a slurry.
12 . Polishing particles,
wherein an Rps value calculated by the following Formula 1 is 0.5 to 2:
Rps
=
Ap
As
[
Formula
1
]
in [Formula 1],
Ap is a specific surface area of a micropore of the polishing particles, and
As is a specific surface area of an external surface of the polishing particles.
13 . The polishing particles of claim 12 ,
wherein the Ap is 25 m 2 /g to 50 m 2 /g.
14 . The polishing particles of claim 12 ,
wherein the As is 10 m 2 /g to 30 m 2 /g.
15 . The polishing particles of claim 12 ,
wherein a BET specific surface area of the polishing particles is 30 m 2 /g to 80 m 2 /g.
16 . The polishing particles of claim 12 ,
wherein a specific pore volume of micropore of the polishing particles is 0.011 cm 3 /g to 0.2 cm 3 /g.
17 . The polishing particles of claim 12 ,
wherein the polishing particles comprise primary particles having an average diameter of 15 nm to 40 nm.
18 . The polishing particles of claim 17 ,
wherein the polishing particles further comprise secondary particles having an average diameter of 120 nm or more.
19 . The polishing particles of claim 17 ,
wherein the polishing particles further comprise secondary particles having an average diameter of less than 50 nm.