ION IMPLANTATION METHOD AND SOLID SOURCE MATERIAL USED FOR ION GENERATION
An ion implantation method includes heating a solid source material containing a first metal element at a predetermined operating temperature to generate a vapor containing the first metal element, generating a plasma containing ions of the first metal element using the vapor, and implanting the ions of the first metal element obtained from the plasma into a workpiece, in which the solid source material contains a first material that contains the first metal element and has a melting point, a sublimation point, or a decomposition point lower than the operating temperature, and a second material that contains an oxide, a nitride, a carbide, or a metal and has a melting point, a sublimation point, or a decomposition point higher than the operating temperature.
1 . An ion implantation method comprising:
heating a solid source material containing a first metal element at a predetermined operating temperature to generate a vapor containing the first metal element;
generating a plasma containing ions of the first metal element using the vapor; and
implanting the ions of the first metal element obtained from the plasma into a workpiece,
wherein the solid source material contains
a first material that contains the first metal element and has a melting point, a sublimation point, or a decomposition point lower than the operating temperature, and
a second material that contains an oxide, a nitride, a carbide, or a metal and has a melting point, a sublimation point, or a decomposition point higher than the operating temperature.
2 . The ion implantation method according to claim 1 ,
wherein the first material contains a metal or a halide containing the first metal element.
3 . The ion implantation method according to claim 2 ,
wherein the second material contains an oxide, a nitride, or a carbide containing the first metal element.
4 . The ion implantation method according to claim 2 ,
wherein the second material contains an oxide, a nitride, or a carbide containing an element different from the first metal element.
5 . The ion implantation method according to claim 1 ,
wherein the second material contains an oxide, a nitride, a carbide, or a metal containing a second metal element different from the first metal element.
6 . The ion implantation method according to claim 1 ,
wherein the first material contains a halide of the first metal element, and
the second material contains a metal containing the first metal element or a metal containing a second metal element different from the first metal element.
7 . The ion implantation method according to claim 1 ,
wherein the second material contains glass or a ceramic.
8 . The ion implantation method according to claim 1 ,
wherein the first metal element is Ga, Al, In, Sb, Sn, Mg, Cu, Zr, Hf, Ru, Rh, Pd, La, Gd, Tb, Dy, Er, or Yb.
9 . The ion implantation method according to claim 1 ,
wherein a ratio W 2 /W 1 between a first weight W 1 of the first material and a second weight W 2 of the second material in the solid source material is 0.1 or more and 10 or less.
10 . The ion implantation method according to claim 1 ,
wherein the solid source material contains a green compact obtained by compression-molding a powder where the first material and the second material are mixed.
11 . The ion implantation method according to claim 10 ,
wherein a size of the green compact is 1 mm or more and 50 mm or less.
12 . The ion implantation method according to claim 10 ,
wherein an average particle size of the powder is 1 μm or more and 1 mm or less.
13 . The ion implantation method according to claim 1 ,
wherein the solid source material further contains a third material that is a halide containing an element different from the first metal element.
14 . The ion implantation method according to claim 13 ,
wherein the third material is ammonium halide.
15 . The ion implantation method according to claim 13 ,
wherein the solid source material contains a green compact obtained by compression-molding a powder where the first material, the second material, and the third material are mixed.
16 . The ion implantation method according to claim 13 ,
wherein a ratio W 3 /W 1 between a first weight W 1 of the first material and a third weight W 3 of the third material in the solid source material is 0.1 or more and 10 or less.
17 . The ion implantation method according to claim 1 ,
wherein the operating temperature is 100° C. or higher and 1200° C. or lower.
18 . The ion implantation method according to claim 1 , further comprising mixing assist gas with the vapor,
wherein the plasma is generated using mixed gas of the vapor and the assist gas.
19 . The ion implantation method according to claim 1 , further comprising:
extracting ions from the generated plasma; and
performing mass analysis of the extracted ions to selectively extract the ions of the first metal element,
wherein a beam current of the ions of the first metal element implanted into the workpiece is 0.1 mA or more and 20 mA or less.
20 . A solid source material that is heated at a predetermined operating temperature for generating ions of a first metal element to be implanted into a workpiece, the solid source material comprising:
a first material that contains the first metal element and has a melting point, a sublimation point, or a decomposition point lower than the operating temperature; and
a second material that contains an oxide, a nitride, a carbide, or a metal and has a melting point, a sublimation point, or a decomposition point higher than the operating temperature.