Systems and Methods for Additive Deposition Patterns
Systems and methods for additive manufacturing techniques for deposition layering in additive manufacturing techniques. Various embodiments are directed to processes for additive manufacturing using deposition layer patterns. In some embodiments, deposition layer pattens provide printed components with desired geometries. Individual deposition layer pattern within a printed component can vary between layers, in accordance with several embodiments.
1 . A method for depositing a layer pattern comprising:
defining a perimeter pattern polygon, wherein the perimeter pattern polygon comprises a first portion and a second portion;
depositing the first portion of the perimeter pattern polygon, wherein depositing the first portion of the perimeter pattern polygon comprises depositing a first tail portion outside the area defined by the perimeter pattern polygon, wherein the first tail portion extends from a start point on the first portion of the perimeter pattern polygon;
depositing an in-fill pattern within an area defined by the perimeter pattern polygon, wherein depositing the in-fill pattern within the area defined by the perimeter pattern polygon ends near the start point; and
depositing the second portion of the perimeter pattern polygon, wherein depositing the second portion of the perimeter pattern polygon comprises depositing a second tail portion outside the area defined by the perimeter pattern polygon, wherein the second tail portion extends from an end point on the second portion of the perimeter pattern polygon.
2 . The method of claim 1 , further comprising depositing a second layer pattern on top of a first layer pattern, wherein depositing the first portion of the perimeter pattern polygon of the second layer pattern is different than a start point of the first layer pattern.
3 . The method of claim 1 , wherein depositing the first portion of the perimeter pattern polygon, depositing the in-fill pattern, and depositing the second portion of the perimeter pattern polygon comprises depositing a material at a feed rate; wherein the feed rate is dynamically changed.
4 . The method of claim 3 , wherein the feed rate of depositing the in-fill pattern is greater than the feed rate of depositing the first portion and the second portion of the perimeter pattern polygon.
5 . The method of claim 3 , wherein the feed rate of depositing the in-fill pattern is less than the feed rate of depositing the first portion and the second portion of the perimeter pattern polygon.
6 . The method of claim 1 , wherein the perimeter pattern polygon comprises a first corner and a second corner, wherein the step of deposition the first portion of the perimeter pattern polygon begins at the first corner.
7 . The method of claim 6 , further comprising depositing a second layer pattern comprising depositing the first portion of the perimeter polygon of the second layer pattern begins at the second corner.
8 . The method of claim 6 , wherein the in-fill lines are at an offset angle from the in-fill lines of the second layer pattern.
9 . The method of claim 8 , wherein the first corner and the second corner are adjacent corners within the perimeter pattern polygon, wherein the offset angle is equal to an interior angle of the perimeter pattern polygon.
10 . A system for weld path planning comprising:
a controller comprising a processor and a memory, wherein the memory comprises an application configured to direct the processor to perform a method for determining a layer pattern comprising:
determining a perimeter pattern, comprising a first portion and a second portion; and
determining an in-fill pattern within an area defined by the perimeter pattern;
wherein the layer pattern is a portion of a weld path plan that runs continuously from the first portion into the in-fill pattern and from the in-fill pattern into the second portion.
11 . The system of claim 10 , wherein the first portion of the perimeter pattern further comprises a first tail portion, wherein the first tail portion is outside the area defined by the perimeter pattern, wherein the second portion of the perimeter pattern further comprises a second tail portion, wherein the second tail portion is outside the area defined by the perimeter pattern.
12 . The system of claim 10 , wherein the in-fill pattern comprises a plurality of in-fill lines and a plurality of turn regions, and wherein the in-fill lines are approximately parallel.
13 . The system of claim 12 , wherein the first portion of the perimeter pattern comprises a first side and a second side, wherein the second portion of the perimeter pattern comprises a third side and a fourth side, and wherein the second side and the fourth side are approximately parallel to the in-fill lines.
14 . The system of claim 12 , wherein the in-fill lines are separated by an in-fill space, and wherein the turn region has a radius greater than the in-fill space.
15 . The system of claim 10 , wherein the in-fill pattern fills the area defined by the perimeter pattern.
16 . A system comprising:
a controller comprising a processor and a memory, wherein the memory comprises an application configured to direct the processor to perform a method, the method comprising:
determining a plurality of layer patterns, wherein each layer pattern comprises a continuous deposition, wherein each layer pattern comprises:
a perimeter pattern, comprising a first portion and a second portion; and
an in-fill pattern within an area defined by the perimeter pattern, wherein the in-fill pattern comprises a plurality of in-fill lines and a plurality of turn regions, and wherein the in-fill lines are approximately parallel;
wherein the plurality of layer patterns are stacked, wherein a first layer pattern and a second layer pattern are adjacent in the stack, and wherein the in-fill lines of the first layer pattern are at an offset angle from the in-fill lines of the second layer pattern.
17 . The system of claim 16 , wherein each layer pattern comprises a start point, wherein the start point is at a corner of the perimeter pattern.
18 . The system of claim 17 , wherein the start point of the first layer pattern is at a first corner of the perimeter pattern, wherein the start point of the second layer pattern is at a second corner of the perimeter pattern.
19 . The system of claim 18 , wherein the first corner and the second corner are adjacent corners within the perimeter pattern, wherein the offset angle is equal to an interior angle of the perimeter pattern.
20 . The system of claim 16 , wherein the first portion of the perimeter pattern of each layer pattern in the plurality of layer patterns comprises a first side and a second side;
wherein the second portion of the perimeter pattern comprises a third side and a fourth side; and
wherein the at least one of the first side, the second side, the third side, or the fourth side of the perimeter pattern of the first layer pattern is different than at least one of the first side, the second side, the third side, or the fourth side of the perimeter pattern of the second layer pattern.