IP Library › Granted Patent US 523,403
Granted Patent S1
US 523,403 · App. 29/217,556 · Granted Jun 20, 2006

Substrate for a semiconductor device

Assignee: Kabushiki Kaisha Toshiba
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Quick Facts
Patent No.
US 523,403
App. No.
29/217,556
Granted
Jun 20, 2006
Kind
S1
Claims (1)

The ornamental design for a substrate for a semiconductor device, as shown and described.

Assignments (3)
CHANGE OF NAME Recorded Feb 7, 2020
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 051842/0627 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 12, 2018
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 045175/0632 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 19, 2004
From: MIZUKOSHI, YUKIKO
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 016029/0045 →
Priority Claims (1)
JP 2004-027496 · Sep 9, 2004 · national