IP Library › Granted Patent US 556,704
Granted Patent S1
US 556,704 · App. 29/236,982 · Granted Dec 4, 2007

Grounded electrode for a plasma processing apparatus

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Quick Facts
Patent No.
US 556,704
App. No.
29/236,982
Granted
Dec 4, 2007
Kind
S1
Claims (1)

The ornamental design for grounded electrode for a plasma processing apparatus, as shown.

Assignments (1)
CHANGE OF NAME AND ADDRESS Recorded Mar 30, 2020
From: HITACHI HIGH-TECHNOLOGIES CORPORATION
To: HITACHI HIGH-TECH CORPORATION
Reel/Frame 052259/0227 →