IP Library › Granted Patent US 924,824
Granted Patent S1
US 924,824 · App. 29/677,728 · Granted Jul 13, 2021

Ion shield plate base for semiconductor manufacturing apparatus

Inventors: Yutaka Kouzuma (Tokyo, JP); Kazuyuki Hirozane (Tokyo, JP); Michiaki Kobayashi (Tokyo, JP); Yoshifumi Ogawa (Tokyo, JP)
Assignee: Hitachi High-Tech Corporation
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Quick Facts
Patent No.
US 924,824
App. No.
29/677,728
Granted
Jul 13, 2021
Kind
S1
Claims (1)

The ornamental design for an ion shield plate base for semiconductor manufacturing apparatus, as shown and described.

Assignments (2)
CHANGE OF NAME Recorded Apr 14, 2020
From: HITACHI HIGH-TECHNOLOGIES CORPORATION
To: HITACHI HIGH-TECH CORPORATION
Reel/Frame 052398/0249 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 4, 2019
From: KOUZUMA, YUTAKA; HIROZANE, KAZUYUKI; KOBAYASHI, MICHIAKI; OGAWA, YOSHIFUMI
To: HITACHI HIGH-TECHNOLOGIES CORPORATION
Reel/Frame 048789/0308 →
Priority Claims (1)
JP 2018-016189 · Jul 24, 2018 · national