IP Library › Granted Patent US 900,760
Granted Patent S1
US 900,760 · App. 29/677,753 · Granted Nov 3, 2020

Ion shield plate for semiconductor manufacturing apparatus

Inventors: Yutaka Kouzuma (Tokyo, JP); Michiaki Kobayashi (Tokyo, JP); Kazuyuki Hirozane (Tokyo, JP); Kohei Kawamura (Tokyo, JP); Nobuya Miyoshi (Tokyo, JP); Hiroyuki Kobayashi (Tokyo, JP)
Assignee: Hitachi High-Tech Corporation
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Quick Facts
Patent No.
US 900,760
App. No.
29/677,753
Granted
Nov 3, 2020
Kind
S1
Claims (1)

The ornamental design for an ion shield plate for semiconductor manufacturing apparatus, as shown and described.

Assignments (2)
CHANGE OF NAME Recorded Apr 14, 2020
From: HITACHI HIGH-TECHNOLOGIES CORPORATION
To: HITACHI HIGH-TECH CORPORATION
Reel/Frame 052398/0249 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 4, 2019
From: KOUZUMA, YUTAKA; KOBAYASHI, MICHIAKI; HIROZANE, KAZUYUKI; KAWAMURA, KOHEI; MIYOSHI, NOBUYA; KOBAYASHI, HIROYUKI
To: HITACHI HIGH-TECHNOLOGIES CORPORATION
Reel/Frame 048789/0410 →
Priority Claims (1)
JP 2018-016190 · Jul 24, 2018 · national