IP Library › Granted Patent US 901,407
Granted Patent S1
US 901,407 · App. 29/677,764 · Granted Nov 10, 2020

Integrated type ion shield for semiconductor manufacturing apparatus

Inventors: Yutaka Kouzuma (Tokyo, JP); Michiaki Kobayashi (Tokyo, JP); Kazuyuki Hirozane (Tokyo, JP); Nobuya Miyoshi (Tokyo, JP); Kohei Kawamura (Tokyo, JP); Hiroyuki Kobayashi (Tokyo, JP)
Assignee: Hitachi High-Tech Corporation
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Quick Facts
Patent No.
US 901,407
App. No.
29/677,764
Granted
Nov 10, 2020
Kind
S1
Claims (1)

The ornamental design for an integrated type ion shield for semiconductor manufacturing apparatus, as shown and described.

Assignments (2)
CHANGE OF NAME Recorded Apr 14, 2020
From: HITACHI HIGH-TECHNOLOGIES CORPORATION
To: HITACHI HIGH-TECH CORPORATION
Reel/Frame 052398/0249 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 4, 2019
From: KOUZUMA, YUTAKA; KOBAYASHI, MICHIAKI; HIROZANE, KAZUYUKI; MIYOSHI, NOBUYA; KAWAMURA, KOHEI; KOBAYASHI, HIROYUKI
To: HITACHI HIGH-TECHNOLOGIES CORPORATION
Reel/Frame 048789/0607 →
Priority Claims (1)
JP 2018-016191 · Jul 24, 2018 · national