Patent Application
Provisional
App. No. 60/556,961
· Confirmation No. 9670
Method of forming super-steep well profiles on MOS source/drain regions for SRAM soft error rate improvement
Provisional Application Expired
Inventors
Jeong-Yeop Nahm
San Jose, CA
Helmut Puchner
Santa Clara, CA
Oliver Pohland
San Jose, CA
Yanzhong Xu
Santa Clara, CA
Attorneys & Agents of Record
Prosecution
- Customer No.
- 35617
- Docket No.
- 5298-18900
- Confirmation No.
- 9670
RELEASE OF SECURITY INTEREST
Recorded 2017-12-22
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded 2017-12-21
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this application's details
Quick Facts
- App. No.
- 60/556,961
- Filed
- 2004-03-26
External Links