Patent Application
Provisional
App. No. 63/049,775
· Confirmation No. 1032
Method Of Forming Split Gate Memory Cells With Thinner Tunnel Oxide
Applicant:
Silicon Storage Technology, Inc.
Provisional Application Expired
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⬇ PDF
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Code | Description | Pages | ||
|---|---|---|---|---|---|
| 2020-07-21 | APP.FILE.REC |
Filing Receipt | 3 | View | |
| 2020-07-15 | OATH |
Oath or Declaration filed | 4 | View | |
| 2020-07-09 | SCORE |
Placeholder sheet indicating presence of supplemental content in Supplemental Complex Repository for Examiners(SCORE) | 1 | View | |
| 2020-07-09 | TR.PROV |
Provisional Cover Sheet (SB16) | 3 | View | |
| 2020-07-09 | ADS |
Application Data Sheet | 9 | View | |
| 2020-07-09 | SPEC |
Specification | 7 | View | |
| 2020-07-09 | DRW.NONBW |
Drawings-other than black and white line drawings | 9 | View | |
| 2020-07-09 | WFEE |
Fee Worksheet (SB06) | 2 | View | |
| 2020-07-09 | N417 |
Electronic Filing System Acknowledgment Receipt | 3 | View | |
| 2020-07-09 | DRW.SUPP |
Drawings-black and white line and/or other drawings | — | View |
Inventors
Jeng-Wei Yang
Zhubei City, TAIWAN
Man Wu
Hsinchu, TAIWAN
Boolean Fan
Hsinchu, TAIWAN
Nhan Do
Saratoga, CA
Attorneys & Agents of Record
Prosecution
- Customer No.
- 107446
- Docket No.
- 351913-980120
- Confirmation No.
- 1032
No recorded assignments were found for this patent.
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Quick Facts
- App. No.
- 63/049,775
- Filed
- 2020-07-09
External Links