Method for growing single-wall carbon nanotubes utlizing seed molecules
This invention relates generally to a method for growing single-wall carbon nanotube (SWNT) from seed molecules. The supported or unsupported SWNT seed materials can be combined with a suitable growth catalyst by opening SWNT molecule ends and depositing a metal atom cluster. In one embodiment, a suspension of seed particles containing attached catalysts is injected into an evaporation zone to provide an entrained reactive nanoparticle. A carbonaceous feedstock gas is then introduced into the nanoparticle stream under conditions to grow single-wall carbon nanotubes. Recovery of the product produced can be done by filtration, centrifugation and the like.
1. A method for growing single-wall carbon nanotubes comprising:
(a) providing seed molecules comprising segments of single-wall carbon nanotubes, wherein the single-wall carbon nanotubes are attached to active catalyst particles, and wherein the active catalyst particles comprise a Group VI metal;
(b) subjecting the seed molecules and a carbon-containing feedstock gas to conditions capable of growing single-wall carbon nanotubes;
(c) growing single-wall carbon nanotube material; and
(d) recovering the single-wall carbon nanotube material.
2. The method of claim 1 wherein the Group VI metal is selected from the group consisting of chromium (Cr), molybdenum (Mo) and tungsten (W).
3. A method for growing single-wall carbon nanotubes comprising:
(a) providing seed molecules comprising segments of single-wall carbon nanotubes, wherein the single-wall carbon nanotubes are attached to active catalyst particles;
(b) subjecting the seed molecules and a carbon-containing feedstock gas to conditions capable of growing single-wall carbon nanotubes, wherein the carbon containing feedstock gas comprises a substance selected from the group consisting of graphite particles and fullerenes;
(c) growing single-wall carbon nanotube material; and
(d) recovering the single-wall carbon nanotube material.
4. The method of claim 3 wherein partial pressure of the carbon containing feedstock gas is in the range between 0.001 Torr to 1000 Torr.
5. A method for growing single-wall carbon nanotubes comprising:
(a) providing seed molecules comprising segments of single-wall carbon nanotubes, wherein the single-wall carbon nanotubes are attached to active catalyst particles;
(b) subjecting the seed molecules and a carbon-containing feedstock gas to conditions capable of growing single-wall carbon nanotubes;
(c) growing additional single-wall carbon nanotube material; and
(d) recovering the single-wall carbon nanotube material, and wherein the single-wall carbon nanotube material comprises a felt.
6. The method of claim 5 wherein the felt is a high-Tc superconductor.