Method for fabricating a semiconductor device by transferring a layer to a support with curvature
View Patent ↗The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature. Particularly, the object is to provide a method for fabricating a display with curvature, more specifically, a light emitting device having an OLED bonded to a base material with curvature. An external force is applied to a support originally having curvature and elasticity, and the support is bonded to a peeled layer formed over a substrate. Then, when the substrate is peeled, the support returns into the original shape by the restoring force, and the peeled layer as well is curved along the shape of the support. Finally, a transfer object originally having curvature is bonded to the peeled layer, and then a device with a desired curvature is completed.
1. A method for fabricating a semiconductor device comprising:
forming a support with curvature;
forming a transfer object with curvature;
forming a layer containing at least a device over a substrate having higher rigidity than that of the support;
bonding the support with curvature to the layer containing the device with an external force applied so as to match a surface topology of the layer containing the device;
peeling the layer containing the device bonded with the support from the substrate by physical means; and
bonding the transfer object to the layer containing the device to sandwich the layer containing the device between the support and the transfer object,
wherein the support bonded with the layer containing the device returns into a shape after forming the support with curvature at a time of finishing peeling the layer containing the device bonded with the support from the substrate by physical means.
2. The method for fabricating the semiconductor device according to claim 1 , wherein the device includes one kind or a plurality of kinds selected from a thin film transistor and an organic light emitting diode.
3. The method for fabricating the semiconductor device according to claim 1 , wherein the support has curvature and elasticity at a time of finishing forming a support with curvature.
4. The method for fabricating the semiconductor device according to claim 1 , wherein R i ≦R f ≦R m , where a curvature radius of the support after forming a support with curvature is R i , a curvature radius after bonding the support with curvature to the layer containing the device is R m , and a curvature radius after peeling the layer containing the device bonded with the support from the substrate is R f .
5. The method for fabricating the semiconductor device according to claim 1 , wherein the support is an encapsulation material, and the device is an organic light emitting diode.
6. The method for fabricating the semiconductor device according to claim 1 , wherein the support is an opposite substrate and the device has a pixel electrode, in which a liquid crystal material is filled between the pixel electrode and the opposite substrate.
7. The method for fabricating the semiconductor device according to claim 1 , wherein at least one of the support and the transfer object is transparent.
8. The method for fabricating the semiconductor device according to claim 1 , wherein curvature radii of the support and the transfer object range from 50 to 200 cm.
9. A method for fabricating a semiconductor device comprising:
preparing a support with curvature;
preparing a transfer object with curvature;
forming a layer containing at least a device over a substrate having higher rigidity than that of the support;
bonding the support with curvature to the layer containing the device with an external force applied so as to match a surface topology of the layer containing the device;
peeling the layer containing the device bonded with the support from the substrate by physical means; and
bonding the transfer object to the layer containing the device to sandwich the layer containing the device between the support and the transfer object,
wherein the support bonded with the layer containing the device returns into a shape after preparing the support with curvature at a time of finishing peeling the layer containing the device bonded with the support from the substrate by physical means.
10. The method for fabricating the semiconductor device according to claim 9 , wherein the device includes one kind or a plurality of kinds selected from a thin film transistor and an organic light emitting diode.
11. The method for fabricating the semiconductor device according to claim 9 , wherein the support has curvature and elasticity at a time of finishing preparing a support with curvature.
12. The method for fabricating the semiconductor device according to claim 9 , wherein R i ≦R f ≦R m , where a curvature radius of the support after preparing a support with curvature is R i , a curvature radius after bonding the support with curvature to the layer containing the device is R m , and a curvature radius after peeling the layer containing the device bonded with the support from the substrate is R f .
13. The method for fabricating the semiconductor device according to claim 9 , wherein the support is an encapsulation material, and the device is an organic light emitting diode.
14. The method for fabricating the semiconductor device according to claim 9 , wherein the support is an opposite substrate and the device has a pixel electrode, in which a liquid crystal material is filled between the pixel electrode and the opposite substrate.
15. The method for fabricating the semiconductor device according to claim 9 , wherein at least one of the support and the transfer object is transparent.
16. The method for fabricating the semiconductor device according to claim 9 , wherein curvature radii of the support and the transfer object range from 50 to 200 cm.
17. A method for fabricating a semiconductor device comprising:
preparing a support with curvature;
preparing a transfer object with curvature;
forming a layer containing at least a device over a substrate having higher rigidity than that of the support;
bonding the support with curvature to the layer containing the device;
peeling the layer containing the device bonded with the support from the substrate; and
bonding the transfer object to the layer containing the device to sandwich the layer containing the device between the support and the transfer object,
wherein the support bonded with the layer containing the device returns into a curved shape by restoring force after peeling the layer containing the device bonded with the support from the substrate.
18. The method for fabricating the semiconductor device according to claim 17 , wherein the device includes one kind or a plurality of kinds selected from a thin film transistor and an organic light emitting diode.
19. The method for fabricating the semiconductor device according to claim 17 , wherein the support has curvature and elasticity at a time of finishing preparing a support with curvature.
20. The method for fabricating the semiconductor device according to claim 17 , wherein R i ≦R f ≦R m , where a curvature radius of the support after preparing a support with curvature is R i , a curvature radius after bonding the support with curvature to the layer containing the device is R m , and a curvature radius after peeling the layer containing the device bonded with the support from the substrate is R f .
21. The method for fabricating the semiconductor device according to claim 17 , wherein the support is an encapsulation material, and the device is an organic light emitting diode.
22. The method for fabricating the semiconductor device according to claim 17 , wherein the support is an opposite substrate and the device has a pixel electrode, in which a liquid crystal material is filled between the pixel electrode and the opposite substrate.
23. The method for fabricating the semiconductor device according to claim 17 , wherein at least one of the support and the transfer object is transparent.
24. The method for fabricating the semiconductor device according to claim 17 , wherein curvature radii of the support and the transfer object range from 50 to 200 cm.
25. A method for fabricating a semiconductor device comprising:
preparing a support with curvature;
preparing a transfer object with curvature;
forming a layer containing at least a device over a substrate having higher rigidity than that of the support;
bonding the support with curvature to the layer containing the device;
peeling the layer containing the device bonded with the support from the substrate; and
bonding the transfer object to the layer containing the device to sandwich the layer containing the device between the support and the transfer object.
26. The method for fabricating the semiconductor device according to claim 25 , wherein the device includes one kind or a plurality of kinds selected from a thin film transistor and an organic light emitting diode.
27. The method for fabricating the semiconductor device according to claim 25 , wherein the support has curvature and elasticity at a time of finishing preparing a support with curvature.
28. The method for fabricating the semiconductor device according to claim 25 , wherein R i ≦R f ≦R m , where a curvature radius of the support after preparing a support with curvature is R i , a curvature radius after bonding the support with curvature to the layer containing the device is R m , and a curvature radius after peeling the layer containing the device bonded with the support from the substrate is R f .
29. The method for fabricating the semiconductor device according to claim 25 , wherein the support is an encapsulation material, and the device is an organic light emitting diode.
30. The method for fabricating the semiconductor device according to claim 25 , wherein the support is an opposite substrate and the device has a pixel electrode, in which a liquid crystal material is filled between the pixel electrode and the opposite substrate.
31. The method for fabricating the semiconductor device according to claim 25 , wherein at least one of the support and the transfer object is transparent.
32. The method for fabricating the semiconductor device according to claim 25 , wherein curvature radii of the support and the transfer object range from 50 to 200 cm.