Semiconductor device incorporating internal power supply for compensating for deviation in operating condition and fabrication process conditions
A semiconductor integrated circuit comprises a semiconductor chip, a power supply terminal provided on the semiconductor chip for receiving a voltage from an external power supply source, an internal circuit provided on the semiconductor chip, a power supply circuit provided on the semiconductor chip for transforming an external power supply voltage received from the power supply terminal for supplying a source voltage resulting from the voltage transformation to the internal circuit, and a control circuit provided on the semiconductor chip for controlling the power supply circuit, wherein the control circuit includes external power supply voltage detecting means and/or temperature detecting means and responds to the signal from the external power supply voltage detecting means and/or the temperature detecting means by changing the power supply voltage to the internal circuit to thereby maintain the operating speed of the internal circuit to be constant.
1. A semiconductor device, comprising:
an internal circuit including a CMOS circuit and a MOS transistor having a source drain path inserted between an operating power source voltage for the CMOS circuit and the source node of the CMOS circuit;
a detector outputting a first signal indicating an operating parameter of said internal circuit;
a wire supplying a first voltage to said internal circuit and said detector; and
an amplifier generating the first voltage according to a difference between the first signal and a reference value and outputting the first voltage to said wire,
wherein the first voltage is supplied to the gate of the MOS transistor.
2. The semiconductor device according to claim 1 ,
wherein the MOS transistor controls a current of the operating power source voltage to be supplied to the CMOS circuit according to the first voltage.
3. The semiconductor device according to claim 1 ,
wherein said detector outputs a second signal indicating the operating parameter of said internal circuit and the second signal is generated based on the first signal,
wherein said semiconductor device further comprises a circuit detecting a phase difference of the first signal and the second signal and outputting a detection voltage according to the phase difference, and
wherein said amplifier generates the first voltage according to a difference between the detection voltage and the reference value as a reference voltage.