Quantum dots, nanocomposite materials with quantum dots, devices with quantum dots, and related fabrication methods
The invention provides “engineered” nonlinear nanocomposite materials with an extremely large χ (3) and fast temporal response along with optical properties that can be precisely tuned to satisfy the requirements of a particular application (e.g., optical, thermal, mechanical, etc.). In particular, the magnitude of the linear and nonlinear index of refraction can be adjusted substantially independently of the absorption spectrum of the material. In addition, the optical characteristics can be engineered substantially independently from the mechanical and chemical characteristics, providing exceptional performance and flexibility in terms of device-incorporation and process-stability.
1. An engineered nonlinear nanocomposite material comprising:
a matrix material; and
a semiconductor quantum dot comprising a shell,
the nanocomposite material having a nonlinear index of refraction that is greater than 10 −9 cm 2 /W.
2. The nanocomposite material of claim 1 , wherein the semiconductor quantum dot is a silicon quantum dot.
3. The nanocomposite material of claim 1 , wherein the semiconductor quantum dot is a germanium quantum dot.
4. The nanocomposite material of claim 1 , wherein the shell is SiO x where x is selected between the range of 0 to 2.
5. The nanocomposite material of claim 1 , wherein the shell is GeO x where x is selected between the range of 0 to 2.
6. The nanocomposite material of claim 1 , wherein the semiconductor quantum dot further comprises a substantially defect free silicon crystal core with a maximum dimension between 1 and 10 nm, and the shell is a substantially noncrystalline silicon-oxide shell surrounding the silicon crystal core, with a maximum dimensional width between 0.1 nm and 5 nm, such that the average molecular formula of the silicon-oxide shell is characterized by SiO r , with r between 0 and 2.
7. The nanocomposite material of claim 6 , wherein the semiconductor quantum dot further comprises a set of comprising one or more different organic molecules R(R) bound to the outer surface of the silicon-oxide shell such that the average surface density of R ranges from 0 to 4 molecules per nm 2 across the outer surface of the silicon-oxide shell.
8. The nanocomposite material of claim 1 , wherein the semiconductor quantum dot further comprises a substantially defect free germanium crystal core with a maximum dimension between 1 and 10 nm, and the shell is a substantially noncrystalline germanium-oxide shell surrounding the germanium crystal core, with a maximum dimensional width between 0.1 nm and 5 nm, such that the average molecular formula of the germanium-oxide shell is characterized by GeO r , with r between 0 and 2.
9. The nanocomposite material of claim 8 , wherein the semiconductor quantum dot further comprises a set of organic molecules R bound to the outer surface of the germanium-oxide shell, and imparts nonlinearity.