IP Library Granted Patent US 7,046,563
Granted Patent B1
US 7,046,563 · App. 11/115,347 · Granted May 16, 2006

Parallel compression test circuit of memory device

Assignee: Hynix Semiconductor Inc.
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,046,563
App. No.
11/115,347
Granted
May 16, 2006
Kind
B1
Abstract

A parallel compression test circuit of a memory device operates write drivers sequentially in a parallel compression test to disperse peak current and reduce noise. The circuit comprises a write driving control unit for generating a plurality of write driving control signals in response to a column operation pulse signal at the same timing in a normal mode, at a different timing in the parallel compression test mode.

Claims (14)

1. A parallel compression test circuit of a memory device, comprising:

a plurality of banks each comprising a plurality of bit line sense amplifiers for sensing and amplifying data on a bit line;

a plurality of driving units for driving data on a global input/output line in response to a plurality of write driving control signals to transmit the data to the bit line sense amplifier;

a plurality of global input/output write driving units for driving inputted data to transmit the data to the global input/output line; and

a write driving control unit for generating the plurality of write driving control signals in response to a column operation pulse signal, wherein the plurality of write driving control signals are generated at the same timing in a normal mode and at a different timing in a parallel compression test mode.

2. The parallel compression test circuit according to claim 1 , wherein the write driving control unit comprises:

a plurality of first delay units for sequentially delaying the column operation pulse signal; and

a plurality of write driving control signal generating units for generating the plurality of write driving control signals with output signals from the plurality of first delay units in response to a parallel compression test mode signal.

3. The parallel compression test circuit according to claim 2 , wherein the plurality of first delay units have the same delay time.

4. The parallel compression test circuit according to claim 2 , wherein the write driving control unit comprises a normal mode control unit for controlling the plurality of write driving control signals to be generated at the same timing in response to the parallel compression test mode signal in the normal mode.

5. The parallel compression test circuit according to claim 1 , wherein the write driving control unit comprises:

a second delay unit for delaying the column operation pulse signal at a different delay time; and

a plurality of write driving control signal generating units for generating the plurality of write driving control signals with output signals from the plurality of second delay units in response to a parallel compression test mode signal.

6. The parallel compression test circuit according to claim 5 , wherein the write driving control unit comprises a normal mode control unit for controlling the plurality of write driving control signals to be generated at the same timing in response to the parallel compression test mode signal in the normal mode.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 9, 2014
From: SK HYNIX INC
To: INTELLECTUAL DISCOVERY CO., LTD.
Reel/Frame 032421/0488 →
CHANGE OF NAME Recorded Mar 9, 2014
From: HYNIX SEMICONDUCTOR, INC.
To: SK HYNIX INC
Reel/Frame 032421/0496 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 27, 2005
From: KIM, TAEK SEUNG
To: HYNIX SEMICONDUCTOR INC.
Reel/Frame 016512/0940 →
Priority Claims (1)
KR 10-2005-0025969 · Mar 29, 2005 · national