Image pickup element and its manufacturing method
A image pickup element has a semiconductor substrate which includes a light receiving part, an electric charge readout part, and an electric charge transfer part. The element has a non-doping region which is away from a boundary on a side of the electric charge readout part within the light receiving surface and which does not include a first impurity for identifying threshold value of the electric charge readout part, and has a layer made of the first impurity, which is provided in a doping region outside the non-doping region, within the light receiving surface, in the electric charge readout part, and in the electric charge transfer part.
1. An image pickup element having a semiconductor substrate of a conductivity type which includes at least:
a light receiving part for transforming a light incident on a light receiving surface into an electric charge;
an electric charge readout part for reading out the electric charge which is generated by the light receiving part; and
an electric charge transfer part for outputting the electric charge which is read out by the electric charge readout part,
the image pickup element comprising:
a non-doping region which is provided away from a boundary line on a side of the electric charge readout part, within the light receiving surface of the light receiving part, and which a first impurity for identifying threshold value of the electric charge readout part is not doped into; and
a layer made of the first impurity, the layer being provided at least in a doping region, except the non-doping region, within the light receiving surface of the light receiving part, in the electric charge transfer part, and in the electric charge readout part.
2. The image pickup element as claimed in claim 1 , wherein the layer made of the first impurity is provided in a doping region, except the non-doping region, within the light receiving surface of the light receiving part, and in a region outside the light receiving part except the light receiving part.
3. The image pickup element as claimed in claim 1 , wherein the light receiving part is formed by doping only a necessary amount of a second impurity of a conductivity type, different from the first impurity, for making the non-doping region function as the light receiving part, with respect to the non-doping region into which the first impurity is not doped and with respect to the doping region of the first impurity.
4. The image pickup element as claimed in claim 2 , wherein the light receiving part is formed by doping only a necessary amount of a second impurity of a conductivity type, different from the first impurity, for making the non-doping region function as the light receiving part, with respect to the non-doping region into which the first impurity is not doped and with respect to the doping region of the first impurity.