Nonvolatile semiconductor memory device employing transistors having different gate withstand voltages for enhanced reading speed
View Patent ↗A semiconductor device includes a plurality of nonvolatile memory cells ( 1 ). Each of the nonvolatile memory cells comprises a MOS type first transistor section ( 3 ) used for information storage, and a MOS type second transistor section ( 4 ) which selects the first transistor section. The second transistor section has a bit line electrode ( 16 ) connected to a bit line, and a control gate electrode ( 18 ) connected to a control gate control line. The first transistor section has a source line electrode ( 10 ) connected to a source line, a memory gate electrode ( 14 ) connected to a memory gate control line, and a charge storage region ( 11 ) disposed directly below the memory gate electrode. A gate withstand voltage of the second transistor section is lower than that of the first transistor section. Assuming that the thickness of a gate insulating film of the second transistor section is defined as tc and the thickness of a gate insulating film of the first transistor section is defined as tm, they have a relationship of tc<tm.
1. A semiconductor device comprising:
a plurality of nonvolatile memory cells each including,
a MOS type first transistor section used for information storage, and
a MOS type second transistor section which selects the first transistor section,
wherein the first transistor section and the second transistor section are formed with an insulating region between gate electrodes thereof and adjacent to each other,
wherein a channel region connected to channel regions of the first transistor section and the second transistor section is provided below the insulating region,
wherein the second transistor section has a bit line electrode connected to a bit line, and a control gate electrode connected to a control gate control line,
wherein the first transistor section has a source line electrode connected to a source line, a memory gate electrode connected to a memory gate control line, and a charge storage region disposed directly below the memory gate electrode,
wherein a gate withstand voltage of the second transistor section is lower than a gate withstand voltage of the first transistor section, and
wherein a gate withstand voltage of a drive MOS transistor connected to the control gate control line is lower than a gate withstand voltage of the first transistor section.
2. A semiconductor device according to claim 1 , wherein the bit line electrode and the source line electrode are formed in a well region in which a high-density impurity region is not formed therebetween.
3. A semiconductor device according to claim 2 , wherein the high-density impurity region is a diffused region of an impurity.
4. A semiconductor device according to claim 1 , wherein the charge storage region is a conductive floating gate electrode covered with an insulating film.
5. A semiconductor device according to claim 1 , wherein the charge storage region is a charge trap insulating film covered with an insulating film.
6. A semiconductor device according to claim 1 , wherein the charge storage region is a conductive fine particle layer covered with an insulating film.
7. A semiconductor device according to claim 1 , further including:
switch MOS transistors each capable of connecting the bit line to a global bit line,
wherein the thickness of a gate oxide film of the switch MOS transistor is thinner than the thickness of a gate oxide film of the first transistor section.
8. A semiconductor device according to claim 7 , further including:
a first driver which has the drive MOS transistor and drives the control gate control line;
a second driver which drives the memory gate control line;
a third driver which drives the switch MOS transistor to an on state; and
a fourth driver which drives the source line,
wherein the first driver and the third driver use a first voltage as an operating power supply, and the second driver and the fourth driver use a voltage higher than the first voltage as an operating power supply.
9. A semiconductor device according to claim 8 , further including:
a control circuit which sets an operating power supply of the first driver to a first voltage, sets an operating power supply of the fourth driver to a second voltage higher than the first voltage, and sets an operating power supply of the second driver to a third voltage greater than or equal to the second voltage when a threshold voltage of the first transistor section is rendered high, thereby enabling injection of hot electrons into the charge storage region from the bit line electrode side.
10. A semiconductor device according to claim 9 , wherein the control circuit sets the operating power supply of the second driver to a fourth voltage greater than or equal to the third voltage when the threshold voltage of the first transistor section is rendered low, thereby ejecting electrons from the charge storage region to the corresponding memory gate electrode.
11. A semiconductor device according to claim 10 , wherein the first transistor section whose threshold voltage is made low, is set to a depletion type, and the first transistor section whose threshold voltage is made high, is set to an enhancement type.
12. A semiconductor device according to claim 9 , wherein when information stored in the nonvolatile memory cell is read, the control circuit sets the operating power supply of the first driver to a first voltage and sets the memory gate electrode and the source line electrode to a circuit's ground potential.
13. A semiconductor device according to claim 9 , wherein when information stored in the nonvolatile memory cell is read, the control circuit sets the operating power supply of the first driver to a first voltage and sets the memory gate electrode and the bit line electrode to a circuit's ground potential.
14. A semiconductor device according to claim 8 , further including a logic operation unit which performs a logical operation with the first voltage as an operating power supply.
15. A semiconductor device according to claim 11 , wherein each of the first driver and the third driver receives an address decode signal so that an operation thereof is selected, and each of the second driver and the fourth driver receives the output of the first driver so that an operation thereof is selected.
16. A semiconductor device according to claim 15 , wherein the first driver and the third driver are disposed on one side and the second driver and the fourth driver are disposed on the other side, with an array of the nonvolatile memory cells being interposed therebetween.
17. A semiconductor device according to claim 16 , wherein in the array of the nonvolatile memory cells, memory gate control lines are formed integrally with memory gate electrodes, and low resistance metal layers are laminated over polysilicon layers respectively.
18. A semiconductor device according to claim 16 , wherein discharge MOS transistors for causing the memory gate control lines to be conducted to a circuit's ground potential in response to a read operation are provided at different positions of the memory gate control lines.
19. A semiconductor device according to claim 7 , wherein each of the switch MOS transistors is a p channel type MOS transistor.
20. A semiconductor device according to claim 19 , wherein n channel type discharge MOS transistors switch-operated complementarily to the switch MOS transistors are provided at their corresponding bit lines.
21. A semiconductor device according to claim 7 , wherein the switch MOS transistors are mutually parallel-connected n channel type MOS transistors and p channel type MOS transistors which constitute CMOS transfer gates.