Slurry for CMP, polishing method and method of manufacturing semiconductor device
Disclosed is a CMP slurry comprising a first colloidal particle having a primary particle diameter ranging from 5 nm to 30 nm and an average particle diameter of d 1 , the first colloidal particle being incorporated in an amount of w 1 by weight and a second colloidal particle having a primary particle diameter larger than that of the first colloidal particle and an average particle diameter of d 2 , the second colloidal particle being formed of the same material as that of the first colloidal particle and incorporated in an amount of w 2 by weight, wherein d 1 , d 2 , w 1 and w 2 are selected to concurrently meet following conditions (A) and (B) excluding situations where d 1 , d 2 , w 1 and w 2 concurrently meet following conditions (C) and (D): 3≦ d 2/ d 1≦8 (A) 0.7≦ w 1/( w 1+ w 2)≦0.97 (B) 3≦ d 2/ d 1≦5 (C) 0.7≦ w 1/( w 1+ w 2)≦0.9. (D)
1. A polishing method comprising:
contacting a polishing surface of a semiconductor substrate with a polishing pad attached to a turntable; and
dropping a CMP slurry onto the polishing pad to polish the polishing surface, the CMP slurry comprising a first colloidal particle having a primary particle diameter ranging from 5 nm to 30 nm and an average particle diameter of d 1 , the first colloidal particle being incorporated in an amount of w 1 by weight and a second colloidal particle having a primary particle diameter larger than that of the first colloidal particle and an average particle diameter of d 2 , the second colloidal particle being formed of the same material as that of the first colloidal particle and incorporated in an amount of w 2 by weight, d 1 , d 2 , w 1 and w 2 being selected to concurrently meet following conditions (A) and (B) excluding situations where d 1 , d 2 , w 1 and w 2 concurrently meet following conditions (C) and (D):
3 ≦d 2 /d 1≦8 (A)
0.7 ≦w 1/( w 1 +w 2)≦0.97 (B)
3 ≦d 2 /d 1≦5 (C)
0.7 ≦w 1/( w 1 +w 2)≦0.9 (D).
2. The polishing method according to claim 1 , wherein the first colloidal particle and the second colloidal particle are both formed of colloidal silica particle.
3. The polishing method according to claim 1 , wherein a total content of the first and second colloidal particles is within the range of 0.1 wt % to 20 wt % of the slurry.
4. The polishing method according to claim 1 , wherein the diameter of primary particle of the first colloidal particle is within the range of 10 nm to 20 nm.
5. The polishing method according to claim 1 , wherein a total content of the first and second colloidal particles is within the range of 0.5 wt % to 10 wt % of the slurry.
6. A polishing method according to claim 1 , wherein the polishing surface comprises two materials differing in hardness from each other.
7. A method of manufacturing a semiconductor device comprising:
forming an insulating film above a semiconductor substrate;
forming a recessed portion in the insulating film;
depositing a wiring material inside the recessed portion and on the insulating film through a barrier film to form a conductive layer; and
removing the conductive layer deposited on the insulating film by CMP using a CMP slurry to expose the surface of the insulating film while selectively leaving the conductive layer in the recessed portion, the CMP slurry comprising a first colloidal particle having a primary particle diameter ranging from 5 nm to 30 nm and an average particle diameter of d 1 , the first colloidal particle being incorporated in an amount of w 1 by weight and a second colloidal particle having a primary particle diameter larger than that of the first colloidal particle and an average particle diameter of d 2 , the second colloidal particle being formed of the same material as that of the first colloidal particle and incorporated in an amount of w 2 by weight, d 1 , d 2 , w 1 and w 2 being selected to concurrently meet following conditions (A) and (B) excluding situations where d 1 , d 2 , w 1 and w 2 concurrently meet following conditions (C) and (D):
3 ≦d 2 /d 1≦8 (A)
0.7 ≦w 1/( w 1 +w 2)≦0.97 (B)
3 ≦d 2 /d 1≦5 (C)
0.7 ≦w 1/( w 1 +w 2)≦0.9 (D).
8. The method according to claim 7 , wherein the first colloidal particle and the second colloidal particle are both formed of colloidal silica particle.
9. The method according to claim 7 , wherein a total content of the first and second colloidal particles is within the range of 0.1 wt % to 20 wt % of the slurry.
10. The method according to claim 7 , wherein the diameter of primary particle of the first colloidal particle is within the range of 10 nm to 20 nm.
11. The method according to claim 7 , wherein a total content of the first and second colloidal particles is within the range of 0.5 wt % to 10 wt % of the slurry.
12. The method according to claim 7 , wherein the insulating film is harder than the wiring material.
13. The method according to claim 12 , wherein the insulating film is formed of SiO 2 .
14. The method according to claim 7 , wherein the barrier film is harder than the wiring material.
15. The method according to claim 14 , wherein the barrier film is formed of a Ta film and the wiring material is formed of Cu.