Method of fabricating an oxide layer on a silicon carbide layer utilizing an anneal in a hydrogen environment
Silicon carbide structures are fabricated by fabricating a nitrided oxide layer on a layer of silicon carbide and annealing the nitrided oxide layer in an environment containing hydrogen. Such a fabrication of the nitrided oxide layer may be provided by forming the oxide layer in at least one of nitric oxide and nitrous oxide and/or annealing an oxide layer in at least one of nitric oxide and nitrous oxide. Alternatively, the nitrided oxide layer may be provided by fabricating an oxide layer and fabricating a nitride layer on the oxide layer so as to provide the nitrided oxide layer on which the nitride layer is fabricated. Furthermore, annealing the oxide layer may be provided as a separate step and/or substantially concurrently with another step such as fabricating the nitride layer or performing a contact anneal. The hydrogen environment may be pure hydrogen, hydrogen combined with other gases and/or result from a hydrogen precursor. Anneal temperatures of 400° C. or greater are preferred.
1. A method of forming an insulator in a silicon carbide electronic device, comprising:
fabricating a nitrided oxide layer on a layer of 4H polytype silicon carbide; and
annealing the nitrided oxide layer in an environment containing hydrogen at a temperature of less than about 900° C.;
wherein fabricating a nitrided oxide layer comprises at least one of forming the nitrided oxide layer in at least one of nitric oxide and nitrous oxide and annealing an exiting oxide layer in at least one of nitric oxide and nitrous oxide.
2. The method according to claim 1 , wherein the silicon carbide layer comprises a silicon carbide layer on a non-silicon carbide substrate.
3. The method according to claim 1 , wherein the silicon carbide layer comprises a portion of a silicon carbide substrate.
4. The method of claim 1 , wherein the step of annealing the nitrided oxide layer comprises annealing the oxide layer to a temperature of greater than about 400° C. in a hydrogen containing environment.
5. The method of claim 1 , wherein the step of annealing the oxide layer comprises annealing the nitrided oxide layer at a temperature of between about 400° C. and about 800° C. in a hydrogen containing environment.
6. The method of claim 1 , wherein the step of annealing is preceded by the step of forming metallization for a semiconductor device associated with the nitrided oxide layer.
7. The method of claim 6 , wherein the step of annealing the nitrided oxide layer comprises a metal contact anneal.
8. The method of claim 1 further comprising forming a silicon carbide metal oxide semiconductor device having the oxide layer as a gate oxide of the metal oxide semiconductor device.
9. The method of claim 1 , wherein the step of annealing the nitrided oxide layer is carried out for at least about 2 minutes.
10. A method of forming an insulator in a silicon carbide electronic device, comprising:
fabricating a nitrided oxide layer on a layer of silicon carbide; and
annealing the nitrided oxide layer in H 2 and/or NH 3 ;
wherein the step of fabricating a nitrided oxide layer comprises the steps of:
fabricating an oxide layer; and
fabricating a nitride layer on the oxide layer so as to nitridate the oxide layer on which the nitride layer is fabricated;
wherein annealing the nitrided oxide layer in an environment containing hydrogen is provided substantially concurrently with the step of fabricating the nitride layer so that the step of fabricating a nitride layer on the oxide layer comprises fabricating a nitride layer on the oxide layer so as to nitridate and hydrogenate the oxide layer on which the nitride layer is fabricated.