Methods for marking a packaged semiconductor die including applying tape and subsequently marking the tape
The present invention provides a method and apparatus for marking a semiconductor wafer or device. The method and apparatus have particular application to wafers or devices which have been subjected to a thinning process, including backgrinding in particular. The present method comprises reducing the cross-section of a wafer or device, applying a tape having optical energy-markable properties over a surface or edge of the wafer or device, and exposing the tape to an optical energy source to create an identifiable mark. A method for manufacturing an integrated circuit chip and for identifying a known good die are also disclosed. The apparatus of the present invention comprises a multilevel laser-markable tape for application to a bare semiconductor die. In the apparatus, an adhesive layer of the tape provides a homogenous surface for marking subsequent to exposure to electromagnetic radiation.
1. A method of marking a packaged semiconductor device comprising:
providing a semiconductor die having a reduced cross-section in wafer form;
packaging the semiconductor die forming a packaged semiconductor device, the packaged semiconductor device having a surface;
applying a tape having optical energy-markable properties to at least a portion of the surface of the packaged semiconductor device;
subsequently exposing at least a portion of the tape to optical energy; and
forming a mark.
2. The method of claim 1 , wherein the packaged semiconductor device comprises at least one integrated circuit semiconductor die.
3. The method of claim 1 , wherein applying the tape to the at least a portion of the surface of the packaged semiconductor device includes applying the tape to an edge portion of the packaged semiconductor device.
4. The method of claim 3 , wherein exposing the at least a portion of the tape to optical energy includes exposing the tape on the edge portion of the packaged semiconductor device.
5. The method of claim 1 , wherein the optical energy-markable properties of the tape are embedded within the tape.
6. The method of claim 1 , wherein the optical energy-markable properties of the tape comprise properties of at least one adhesive layer affixed to the tape.
7. The method of claim 6 , wherein the at least one adhesive layer is selected from one of thiolene, poly-paraxylylene (Paralene), urethanes, silicones, epoxies, acrylics, or combinations of any thereof.
8. The method of claim 6 , wherein the at least one adhesive layer is UV-sensitive.
9. The method of claim 6 , wherein the at least one adhesive layer includes a multilayer adhesive having a first outermost layer comprising a mixture of electromagnetic radiation-curable components and a second layer disposed between the tape and the first outermost layer.
10. The method of claim 1 , further comprising:
applying a second tape over at least a portion of a surface of the tape; and
exposing at least a portion of the second tape.
11. The method of claim 10 , wherein the second tape is a carrier tape.
12. The method of claim 11 , wherein the carrier tape includes a carrier tape having translucent properties.
13. The method of claim 11 , wherein the second tape includes a tape having optical energy-markable properties.
14. The method of claim 1 , wherein the tape comprises polytetrafluoroethylene tape.
15. The method of claim 1 , wherein exposing at least a portion of the tape to optical energy comprises exposing the at least a portion of the tape to one of an Nd:YAG laser (yttrium aluminum garnet), an Nd:YLP laser (pulsed ytterbium fiber), or a carbon dioxide laser.
16. The method of claim 1 , wherein exposing the at least a portion of the tape to optical energy includes exposing the at least a portion of the tape to an ultraviolet light source.
17. The method of claim 16 , wherein the tape is comprised of a UV-penetrable polyvinyl chloride tape with an acrylic UV-sensitive adhesive disposed thereon.
18. The method of claim 1 , wherein the tape includes a tape having antistatic capacities.
19. The method of claim 1 , wherein the tape includes a tape of a thermally dissipating material.
20. The method of claim 1 , wherein the tape includes a tape having a coefficient of thermal expansion substantially similar to that of the packaged semiconductor device.
21. The method of claim 1 , wherein forming the mark includes one of heating, chemically reacting, or transferring materials comprising the tape.
22. A method of marking a packaged semiconductor device having a semiconductor die comprising:
providing a semiconductor die in wafer form;
packaging the semiconductor die forming a packaged semiconductor device, the packaged semiconductor device having a surface;
applying a tape having optical energy-markable properties to at least a portion of the surface of the packaged semiconductor device;
subsequently exposing at least a portion of the tape to optical energy; and
forming a mark.
23. The method of claim 22 , wherein the packaged semiconductor device comprises at least one integrated circuit semiconductor die.
24. The method of claim 22 , wherein applying the tape to the at least a portion of a surface of the packaged semiconductor device includes applying the tape to an edge portion of the packaged semiconductor device.
25. The method of claim 24 , wherein exposing the at least a portion of the tape to optical energy includes exposing the tape on the edge portion of the packaged semiconductor device.
26. The method of claim 22 , wherein the optical energy-markable properties of the tape are embedded within the tape.
27. The method of claim 22 , wherein the optical energy-markable properties of the tape comprise properties of at least one adhesive layer affixed to the tape.
28. The method of claim 27 , wherein the at least one adhesive layer is selected from one of thiolene, poly-paraxylylene (Paralene), urethanes, silicones, epoxies, acrylics, or combinations of any thereof.
29. The method of claim 27 , wherein the at least one adhesive layer is UV-sensitive.
30. The method of claim 27 , wherein the at least one adhesive layer includes a multilayer adhesive having a first outermost layer comprising a mixture of electromagnetic radiation-curable components and a second layer disposed between the tape and the first outermost layer.
31. The method of claim 22 , further comprising:
applying a second tape over at least a portion of a surface of the tape; and
exposing at least a portion of the second tape.
32. The method of claim 31 , wherein the second tape is a carrier tape.
33. The method of claim 32 , wherein the carrier tape includes a carrier tape having translucent properties.
34. The method of claim 32 , wherein the second tape includes a tape having optical energy-markable properties.
35. The method of claim 22 , wherein the tape comprises polytetrafluoroethylene tape.
36. The method of claim 22 , wherein exposing the at least a portion of the tape to optical energy comprises exposing the at least a portion of the tape to one of an Nd:YAG laser (yttrium aluminum garnet), an Nd:YLP laser (pulsed ytterbium fiber), or a carbon dioxide laser.
37. The method of claim 22 , wherein exposing the at least a portion of the tape to optical energy includes exposing the at least a portion of the tape to an ultraviolet light source.
38. The method of claim 37 , wherein the tape is comprised of a UV-penetrable polyvinyl chloride tape with an acrylic UV-sensitive adhesive disposed thereon.
39. The method of claim 22 , wherein the tape includes a tape having antistatic capacities.
40. The method of claim 22 , wherein the tape includes a tape of a thermally dissipating material.
41. The method of claim 22 , wherein the tape includes a tape having a coefficient of thermal expansion substantially similar to that of the packaged semiconductor device.
42. The method of claim 22 , wherein forming the mark includes at least one of heating, chemically reacting, or transferring materials comprising the tape.
43. A method of marking a semiconductor die comprising:
providing a semiconductor die having a reduced cross-section in wafer form;
packaging the semiconductor die forming a packaged semiconductor device, the packaged semiconductor device having a surface;
applying a tape having optical energy-markable properties to at least a portion of the surface of the packaged semiconductor device;
subsequently exposing at least a portion of the tape to optical energy; and
forming a mark.
44. The method of claim 43 , wherein the semiconductor die comprises at least one integrated circuit semiconductor die.
45. The method of claim 43 , wherein applying the tape to the at least a portion of the surface of the semiconductor die includes applying the tape to an edge portion of the semiconductor die.
46. The method of claim 45 , wherein exposing the at least a portion of the tape to optical energy includes exposing the tape on the edge portion of the semiconductor die.
47. The method of claim 43 , wherein the optical energy-markable properties of the tape are embedded within the tape.
48. The method of claim 43 , wherein the optical energy-markable properties of the tape comprise properties of at least one adhesive layer affixed to the tape.
49. The method of claim 48 , wherein the at least one adhesive layer is selected from one of thiolene, poly-paraxylylene (Paralene), urethanes, silicones, epoxies, acrylics, or combinations of any thereof.
50. The method of claim 48 , wherein the at least one adhesive layer is UV-sensitive.
51. The method of claim 48 , wherein the at least one adhesive layer includes a multilayer adhesive having a first outermost layer comprising a mixture of electromagnetic radiation-curable components and a second layer disposed between the tape and the first outermost layer.
52. The method of claim 43 , further comprising:
applying a second tape over at least a portion of a surface of the tape; and
exposing at least a portion of the second tape.
53. The method of claim 52 , wherein the second tape is a carrier tape.
54. The method of claim 53 , wherein the carrier tape includes a carrier tape having translucent properties.
55. The method of claim 53 , wherein the second tape includes a tape having optical energy-markable properties.
56. The method of claim 43 , wherein the tape comprises polytetrafluoroethylene tape.
57. The method of claim 43 , wherein exposing the at least a portion of the tape to optical energy comprises exposing the at least a portion of the tape to one of an Nd:YAG laser (yttrium aluminum garnet), an Nd:YLP laser (pulsed ytterbium fiber), or a carbon dioxide laser.
58. The method of claim 43 , wherein exposing the at least a portion of the tape to optical energy includes exposing the at least a portion of the tape to an ultraviolet light source.
59. The method of claim 58 , wherein the tape is comprised of a UV-penetrable polyvinyl chloride tape with an acrylic UV-sensitive adhesive disposed thereon.
60. The method of claim 43 , wherein the tape includes a tape having antistatic capacities.
61. The method of claim 43 , wherein the tape includes a tape of a thermally dissipating material.
62. The method of claim 43 , wherein the tape includes a tape having a coefficient of thermal expansion substantially similar to that of the packaged semiconductor device.
63. The method of claim 43 , wherein forming the mark includes one of heating, chemically reacting, or transferring materials comprising the tape.
64. A method of marking a packaged semiconductor device comprising:
providing a semiconductor die having a reduced cross-section in sliced wafer form;
packaging the semiconductor die forming a packaged semiconductor device, the packaged semiconductor device having a surface;
applying a tape having optical energy-markable properties to at least a portion of the surface of the packaged semiconductor device;
subsequently exposing at least a portion of the tape to optical energy; and
forming a mark.
65. A method of marking a packaged semiconductor device having a semiconductor die comprising:
providing a semiconductor die in sliced wafer form;
packaging the semiconductor die forming a packaged semiconductor device, the packaged semiconductor device having a surface;
applying a tape having optical energy-markable properties to at least a portion of the surface of the packaged semiconductor device;
subsequently exposing at least a portion of the tape to optical energy; and
forming a mark.
66. A method of marking a semiconductor die comprising:
providing a semiconductor die having a reduced cross-section in sliced wafer form;
packaging the semiconductor die forming a packaged semiconductor device, the packaged semiconductor device having a surface;
applying a tape having optical energy-markable properties to at least a portion of the surface of the packaged semiconductor device;
subsequently exposing at least a portion of the tape to optical energy; and
forming a mark.
67. A method of marking a packaged semiconductor device comprising:
providing a semiconductor die having a reduced cross-section as a portion of a wafer;
packaging the semiconductor die forming a packaged semiconductor device, the packaged semiconductor device having a surface;
applying a tape having optical energy-markable properties to at least a portion of the surface of the packaged semiconductor device;
subsequently exposing at least a portion of the tape to optical energy; and
forming a mark.
68. A method of marking a packaged semiconductor device having a semiconductor die comprising:
providing a semiconductor die as a portion of a wafer;
packaging the semiconductor die forming a packaged semiconductor device, the packaged semiconductor device having a surface;
applying a tape having optical energy-markable properties to at least a portion of the surface of the packaged semiconductor device;
subsequently exposing at least a portion of the tape to optical energy; and
forming a mark.
69. A method of marking a semiconductor die comprising:
providing a semiconductor die having a reduced cross-section as a portion of a wafer;
packaging the semiconductor die forming a packaged semiconductor device, the packaged semiconductor device having a surface;
applying a tape having optical energy-markable properties to at least a portion of the surface of the packaged semiconductor device;
subsequently exposing at least a portion of the tape to optical energy; and
forming a mark.
70. A method of marking a packaged semiconductor device comprising:
providing a semiconductor die having a reduced cross-section as a portion of a sliced wafer;
packaging the semiconductor die forming a packaged semiconductor device, the packaged semiconductor device having a surface;
applying a tape having optical energy-markable properties to at least a portion of the surface of the packaged semiconductor device;
subsequently exposing at least a portion of the tape to optical energy; and
forming a mark.
71. A method of marking a packaged semiconductor device having a semiconductor die comprising:
providing the semiconductor die as a portion of a sliced wafer;
packaging the semiconductor die forming a packaged semiconductor device, the packaged semiconductor device having a surface;
applying a tape having optical energy-markable properties to at least a portion of the surface of the packaged semiconductor device;
subsequently exposing at least a portion of the tape to optical energy; and
forming a mark.
72. A method of marking a semiconductor die comprising:
providing a semiconductor die having a reduced cross-section as a portion of a sliced wafer;
packaging the semiconductor die forming a packaged semiconductor device, the packaged semiconductor device having a surface;
applying a tape having optical energy-markable properties to at least a portion of the surface of the packaged semiconductor device;
subsequently exposing at least a portion of the tape to optical energy; and
forming a mark.