Oxidation-resistant conducting perovskites

1. A semiconductor device, comprising:

a conductor having a first perovskite layer over a semiconductor substrate and a second perovskite layer on said first perovskite layer, said first perovskite layer having a different stoichiometric composition than said second perovskite layer and wherein said second perovskite layer has lattice parameters along an interface with said first perovskite layer that are within about ±5 percent of corresponding lattice parameters of said first perovskite layer,

wherein said first perovskite layer comprises between about 1 and about 50 molecular layers and said second perovskite layer comprises between about 1 and about 3 molecular layers.

2. The semiconductor device as recited in claim 1 , wherein said first perovskite layer has a chemical formula of ABO 3 , where said A is one or more cations selected from the group consisting of:

Na; K; Rb; Mg; Ca; Sr; Ba; Sc; Y; Pb; Bi; La;

Ce; Pr; Nd; Sm; Eu; Gd; and Er; and

said B is one or more cations selected from the group consisting of:

Sc; Ti; V; Cr; Mn; Fe; Co; Ni; Cu; Zn; Ga; Al; Zr;

Nb; Mo; Ru; Ta; W; and Re.

3. The semiconductor device as recited in claim 1 , wherein said second perovskite layer has a general chemical formula of CDO 3 , where said C is one or more cations selected from the group consisting of:

atoms from the lanthanides series of elements;

Na; K; Rb; Mg; Ca; Sr; Ba; Sc; Y; Pb; Bi; La;

Ce; Pr; Nd; Sm; Eu; Gd; and Er; and

said D is one or more cations selected from the group consisting of:

Sc; Ti; V; Cr; Mn; Fe; Co; Ni; Cu; Zn; Ga; Al; Zr;

Nb; Mo; Ru; Ta; W; and Re.

4. A semiconductor device, comprising:

a conductor having a first perovskite layer over a semiconductor substrate and a second perovskite layer on said first perovskite layer, said first perovskite layer having a different stoichiometric composition than said second perovskite layer, wherein said second perovskite layer has a general chemical formula of CDO 3 and wherein said C atom is lanthanum and said D atom is titanium.

5. A semiconductor device, comprising:

a conductor having a first perovskite layer over a semiconductor substrate and a second perovskite layer on said first perovskite layer, said first perovskite layer having a different stoichiometric composition than said second perovskite layer wherein said second perovskite layer has a general chemical formula of CDO 3 , where said C is one or more cations selected from the group consisting of:

atoms from the lanthanides series of elements;

Na; K; Rb; Mg; Ca; Sr; Ba; Sc; Y; Pb; Bi; La; Ce;

Pr; Nd; Sm; Eu; Gd; and Er; and

said D is one or more cations selected from the group consisting of

Sc; Ti; V; Cr; Mn; Fe; Co; Ni; Cu; Zn; Ga; Al; Zr;

Nb; Mo; Ru; Ta; W; and Re;

wherein said second perovskite layer has lattice parameters along an interface with said first perovskite layer that are within about ±5 percent of corresponding lattice parameters of said first perovskite layer, and

wherein said first perovskite layer comprises between about 1 and about 50 molecular layers and said second perovskite layer comprises between about 1 and about 3 molecular layers.

6. The semiconductor device as recited in claim 5 , wherein said first perovskite layer comprises between about 1 and about 5 molecular layers and said second perovskite layer comprises about 1 molecular layer.

7. A semiconductor device, comprising:

a conductor having a first perovskite layer over a semiconductor substrate and a second perovskite layer on said first perovskite layer, said first perovskite layer having a different stoichiometric composition than said second perovskite layer, wherein said conductor further includes a third perovskite layer on said second perovskite layer, wherein said third perovskite layer has substantially the same stoichiometric composition as said first perovskite layer.

8. A semiconductor device comprising:

a conductor having a first perovskite layer over a semiconductor substrate and a second perovskite layer on said first perovskite layer, said first perovskite layer having a different stoichiometric composition than said second perovskite layer and wherein said second perovskite layer has lattice parameters along an interface with said first perovskite layer that are within about ±5 percent of corresponding lattice parameters of said first perovskite layer,

wherein said conductor, after exposure to an oxidizing environment comprising an oxygen partial pressure of at least about 0.1 atmospheres and a temperature of between about 500 and about 700° C. for at least about 30 minutes, has a resistivity of less than about one Ohm-cm.

9. A semiconductor device comprising:

a conductor having a first perovskite layer over a semiconductor substrate and a second perovskite layer on said first perovskite layer, said first perovskite layer having a different stoichiometric composition than said second perovskite layer, wherein said conductor is a conductive plate in a capacitor, and

a dielectric layer on said conductive plate, wherein said dielectric layer is a ferro-electric perovskite having the general formula EFO 3 , wherein said E is one or more cations selected from the group consisting of:

Li; Na; Ba; Bi; and Pb; and

said F is one or more cations selected from the group consisting of:

Nb; Ta; Ti; Mn; and Zr.

10. The semiconductor device as recited in claim 9 , further including a second conductor formed on said dielectric layer.

11. A method for forming a semiconductor device comprising:

providing a semiconductor substrate; and

forming a first a perovskite layer on said substrate; and

forming a second perovskite layer on said first perovskite layer, said first perovskite layer having a different stoichiometric composition than said second perovskite layer

wherein said first and second perovskite layers are crystalline and have lattice constants that differ by less than 5 percent, and

wherein interleaved said first and said second perovskite layers are formed by alternately depositing said first perovskite layer and second perovskite layer over said semiconductor substrate.

12. A method for forming a semiconductor device comprising:

providing a semiconductor substrate; and

forming a first a perovskite layer on said substrate;

forming a second perovskite layer on said first perovskite layer, said first perovskite layer having a different stoichiometric composition than said second perovskite layer and further includes forming interleaved layers comprising said first and said second perovskite layers by alternately depositing said first perovskite layer and second perovskite layer over said semiconductor substrate, wherein said first and second perovskite layers are crystalline and have lattice constants that differ by less than 5 percent; and

depositing a dielectric layer on said first and second perovskite layers and depositing a conducting layer on said dielectric layer.

13. A memory cell in a semiconductor structure comprising:

a capacitor including:

a conductive layer over a semiconductor substrate, said conductive layer having a first perovskite layer and a second perovskite layer on said first perovskite layer, said first perovskite layer having a different stoichiometric composition than said second perovskite layer and wherein said second perovskite layer has lattice parameters along an interface with said first perovskite layer that are within about ±5 percent of corresponding lattice parameters of said first perovskite layer;

a dielectric layer on said conductive layer; and

a second conductive layer on said dielectric layer;

electrodes electrically coupled to said capacitor; and

a transistor coupled to said electrodes and said capacitor.