Beam homogenizer laser irradiation, apparatus, semiconductor device, and method of fabricating the semiconductor device
View Patent ↗An optical system (in FIGS. 1 A and 1 B) wherein a rectilinear laser beam of homogeneous energy distribution is defined for annealing a non-single crystalline semiconductor film (a surface to-be-irradiated 1108 ), is constructed of reflectors ( 1106, 1107 etc.) easily and inexpensively without including lenses of transmission type. The rectilinear laser beam can be defined having a length of at least 600 (mm) which corresponds to the shorter latus of a large-sized substrate for mass production.
1. A method for manufacturing a semiconductor device comprising:
forming a non-single crystalline semiconductor film over a substrate;
emitting a laser beam;
expanding the laser beam by a parabolic mirror;
altering a traveling direction of the expanded laser beam by a plurality of plane mirrors;
splitting the laser beam of the altered traveling direction by at least two beam-splitting reflectors each including a plurality of cylindrical parabolic mirrors;
combining the split laser beams into a laser beam elongated in one direction on an irradiation surface;
setting the substrate on a stage; and
irradiating the non-single crystalline semiconductor film with the laser beam elongated in the one direction while moving the stage.
2. A method for manufacturing a semiconductor device according to claim 1 , wherein the parabolic mirror comprises a cylindrical parabolic mirror.
3. A method for manufacturing a semiconductor device according to claim 1 , wherein an oscillator for emitting the laser beam is one selected from the group consisting of an excimer laser, a YAG laser, a glass laser, YVO 4 laser, a YLF laser and an Ar laser.
4. A method for manufacturing a semiconductor device according to claim 1 , wherein the semiconductor device is an active matrix type EL display device.
5. A method for manufacturing a semiconductor device according to claim 1 , wherein the semiconductor device is one selected from the group consisting of a video camera, a digital camera, a projector, a goggle-type display, a personal computer, and a mobile telephone.
6. A method for manufacturing a semiconductor device comprising:
forming a non-single crystalline semiconductor film over a substrate;
emitting a laser beam;
expanding the laser beam by a parabolic mirror;
splitting the expanded laser beam by at least two beam-splitting reflectors each including a plurality of cylindrical parabolic mirrors;
combining the split laser beams into a laser beam elongated in one direction on an irradiation surface;
setting the substrate on a stage; and
irradiate irradiating the non-single crystalline semiconductor film with the laser beam elongated in the one direction while moving the stage.
7. A method for manufacturing a semiconductor device according to claim 6 , wherein the parabolic mirror comprises a cylindrical parabolic mirror.
8. A method for manufacturing a semiconductor device according to claim 6 , wherein an oscillator for emitting the laser beam is one selected from the group consisting of an excimer laser, a YAG laser, a glass laser, YVO 4 laser, a YLF laser and an Ar laser.
9. A method for manufacturing a semiconductor device according to claim 6 , wherein the semiconductor device is an active matrix type EL display device.
10. A method for manufacturing a semiconductor device according to claim 6 , wherein the semiconductor device is one selected from the group consisting of a video camera, a digital camera, a projector, a goggle-type display, a personal computer, and a mobile telephone.
11. A method for manufacturing a semiconductor device comprising:
forming a non-single crystalline semiconductor film over a substrate;
emitting a laser beam;
expanding the laser beam by a parabolic mirror;
altering a traveling direction of the expanded laser beam by a plurality of plane mirrors;
splitting the laser beam of the altered traveling direction by a first beam-splitting reflector including a plurality of cylindrical parabolic mirrors, and a second beam-splitting reflector including a plurality of plane mirrors;
combining the split laser beams into a laser beam elongated in one direction on an irradiation surface;
setting the substrate on a stage; and
irradiating the non-single crystalline semiconductor film with the laser beam elongated in the one direction while moving the stage.
12. A method for manufacturing a semiconductor device according to claim 11 , wherein the parabolic mirror comprises a cylindrical parabolic mirror.
13. A method for manufacturing a semiconductor device according to claim 11 , wherein an oscillator for emitting the laser beam is one selected from the group consisting of an excimer laser, a YAG laser, a glass laser, YVO 4 laser, a YLF laser and an Ar laser.
14. A method for manufacturing a semiconductor device according to claim 11 , wherein the semiconductor device is an active matrix type EL display device.
15. A method for manufacturing a semiconductor device according to claim 11 , wherein the semiconductor device is one selected from the group consisting of a video camera, a digital camera, a projector, a goggle-type display, a personal computer, and a mobile telephone.
16. A method for manufacturing a semiconductor device comprising:
forming a non-single crystalline semiconductor film over a substrate;
emitting a laser beam;
expanding the laser beam by a parabolic mirror;
splitting the expanded laser beam by a first beam-splitting reflector including a plurality of cylindrical parabolic mirrors, and a second beam-splitting reflector including a plurality of plane mirrors;
combining the split laser beams into a laser beam elongated in one direction on an irradiation surface;
setting the substrate on a stage; and
irradiating the non-single crystalline semiconductor film with the laser beam elongated in the one direction while moving the stage.
17. A method for manufacturing a semiconductor device according to claim 16 , wherein the parabolic mirror comprises a cylindrical parabolic mirror.
18. A method for manufacturing a semiconductor device according to claim 16 , wherein an oscillator for emitting the laser beam is one selected from the group consisting of an excimer laser, a YAG laser, a glass laser, YVO 4 laser, a YLF laser and an Ar laser.
19. A method for manufacturing a semiconductor device according to claim 16 , wherein the semiconductor device is an active matrix type EL display device.
20. A method for manufacturing a semiconductor device according to claim 16 , wherein the semiconductor device is one selected from the group consisting of a video camera, a digital camera, a projector, a goggle-type display, a personal computer, and a mobile telephone.
21. A method for manufacturing a semiconductor device comprising:
forming a non-single crystalline semiconductor film over a substrate;
emitting a laser beam;
splitting the laser beam by at least two beam-splitting reflectors each including a plurality of cylindrical parabolic mirrors;
combining the split laser beams into a laser beam elongated in one direction on an irradiation surface;
setting the substrate on a stage; and
irradiating the non-single crystalline semiconductor film with the laser beam elongated in the one direction while moving the stage.
22. A method for manufacturing a semiconductor device according to claim 21 , wherein an oscillator for emitting the laser beam is one selected from the group consisting of an excimer laser, a YAG laser, a glass laser, YVO 4 laser, a YLF laser and an Ar laser.
23. A method for manufacturing a semiconductor device according to claim 21 , wherein the semiconductor device is an active matrix type EL display device.
24. A method for manufacturing a semiconductor device according to claim 21 , wherein the semiconductor device is one selected from the group consisting of a video camera, a digital camera, a projector, a goggle-type display, a personal computer, and a mobile telephone.
25. A method for manufacturing a semiconductor device comprising:
forming a non-single crystalline semiconductor film over a substrate;
emitting a laser beam;
splitting the laser beam by a first beam-splitting reflector including a plurality of cylindrical parabolic mirrors, and a second beam-splitting reflector including a plurality of plane mirrors,
combining the split laser beams into a laser beam elongated in one direction on an irradiation surface;
setting the substrate on a stage; and
irradiating the non-single crystalline semiconductor film with the laser beam elongated in the one direction while moving the stage.
26. A method for manufacturing a semiconductor device according to claim 25 , wherein an oscillator for emitting the laser beam is one selected from the group consisting of an excimer laser, a YAG laser, a glass laser, YVO 4 laser, a YLF laser and an Ar laser.
27. A method for manufacturing a semiconductor device according to claim 25 , wherein the semiconductor device is an active matrix type EL display device.
28. A method for manufacturing a semiconductor device according to claim 25 , wherein the semiconductor device is one selected from the group consisting of a video camera, a digital camera, a projector, a goggle-type display, a personal computer, and a mobile telephone.
29. A method for manufacturing a semiconductor device comprising: forming a non-single crystalline semiconductor film over a substrate;
emitting a laser beam;
splitting the laser beam by at least two beam-splitting reflectors each including a plurality of cylindrical parabolic mirrors;
combining the split laser beams into a laser beam elongated in one direction on an irradiation surface; and
irradiating the non-single crystalline semiconductor film with the laser beam elongated in the one direction.
30. A method for manufacturing a semiconductor device according to claim 29 , wherein an oscillator for emitting the laser beam is one selected from the group consisting of an excimer laser, a YAG laser, a glass laser, YVO 4 laser, a YLF laser and an Ar laser.
31. A method for manufacturing a semiconductor device according to claim 29 , wherein the semiconductor device is an active matrix type EL display device.
32. A method for manufacturing a semiconductor device according to claim 29 , wherein the semiconductor device is one selected from the group consisting of a video camera, a digital camera, a projector, a goggle-type display, a personal computer, and a mobile telephone.
33. A method for manufacturing a semiconductor device comprising:
forming a non-single crystalline semiconductor film over a substrate;
emitting a laser beam;
splitting the laser beam by a first beam-splitting reflector including a plurality of cylindrical parabolic mirrors, and a second beam-splitting reflector including a plurality of plane mirrors,
combining the split laser beams into a laser beam elongated in one direction on an irradiation surface; and
irradiating the non-single crystalline semiconductor film with the laser beam elongated in the one direction.
34. A method for manufacturing a semiconductor device according to claim 33 , wherein an oscillator for emitting the laser beam is one selected from the group consisting of an excimer laser, a YAG laser, a glass laser, YVO 4 laser, a YLF laser and an Ar laser.
35. A method for manufacturing a semiconductor device according to claim 33 , wherein the semiconductor device is an active matrix type EL display device.
36. A method for manufacturing a semiconductor device according to claim 33 , wherein the semiconductor device is one selected from the group consisting of a video camera, a digital camera, a projector, a goggle-type display, a personal computer, and a mobile telephone.