Semiconductor device
View Patent ↗A semiconductor device can include a channel including a zinc-indium oxide film.
1. A semiconductor device comprising:
a drain electrode;
a source electrode;
a channel contacting the drain electrode and the source electrode, wherein the channel includes zinc-indium oxide having a single-phase crystalline state of Zn x In 2y O x+3y , wherein x and y are each independently in the range of about 1 to about 15;
a gate electrode; and
a gate dielectric positioned between the gate electrode and the channel.
2. The semiconductor device of claim 1 , wherein the channel includes being positioned between and electrically coupling the drain electrode and the source electrode.
3. The semiconductor device of claim 1 , wherein at least one of the drain electrode, the source electrode, the channel, the gate electrode, and the gate dielectric is substantially transparent.
4. A semiconductor device comprising:
a drain electrode;
a source electrode;
a channel contacting the drain electrode and the source electrode, wherein the channel includes zinc-indium oxide having a mixed-phase crystalline state formed from compounds selected from the group consisting of ZnO, Zn x In 2y O x+3y , In 2 O 3 , and mixtures thereof;
a gate electrode; and
a gate dielectric positioned between the gate electrode and the channel.
5. The semiconductor device of claim 4 , wherein zinc-indium oxide includes ZnO:Zn x In 2y O x+3y :In 2 O 3 in a ratio of A:B:C, wherein A, B, and C are each in a range of about 0.025 to about 0.95.
6. A semiconductor device comprising:
a drain electrode;
a source electrode;
a channel contacting the drain electrode and the source electrode, wherein the channel includes zinc-indium oxide having an amorphous form from compounds selected from the group consisting of ZnO, Zn x In 2y O x+3y , In 2 O 3 , and mixtures thereof;
a gate electrode; and
a gate dielectric positioned between the gate electrode and the channel.
7. The semiconductor device of claim 5 , wherein zinc-indium oxide includes an atomic composition of zinc and indium in a ratio of zinc(x):indium(1−x), wherein x is in the range of about 0.05 to about 0.95.
8. A semiconductor device, comprising:
a drain electrode;
a source electrode;
means for a channel having a single-phase crystalline state of Zn x In 2y O x+3y , wherein x and y are each independently in the range of about 1 to about 15, to electrically couple the drain electrode and the source electrode;
a gate electrode; and
a gate dielectric positioned between the gate electrode and the channel.
9. The semiconductor device of claim 8 , wherein at least one of the drain electrode, the source electrode, the channel, the gate electrode, and the gate dielectric is substantially transparent.
10. A semiconductor device comprising:
a drain electrode;
a source electrode;
means for a channel having a mixed-phase crystalline state from compounds selected from the group consisting of ZnO, Zn x In 2y O x+3y , In 2 O 3 , and mixtures thereof;
a gate electrode; and
a gate dielectric positioned between the gate electrode and the channel.
11. A semiconductor device comprising:
a drain electrode;
a source electrode;
means for a channel having an amorphous form from compounds selected from the group consisting of ZnO, Zn x In 2y O x+3y , In 2 O 3 , and mixtures thereof;
a gate electrode; and
a gate dielectric positioned between the gate electrode and the channel.
12. A display device, comprising:
a plurality of pixel devices configured to operate collectively to display images, where each of the pixel devices includes a semiconductor device configured to control light emitted by the pixel device, the semiconductor device including:
a drain electrode;
a source electrode;
a channel contacting the drain electrode and the source electrode, wherein the channel includes zinc-indium oxide having a single-phase crystalline state of Zn x In 2y O x+3y , wherein x and y are each independently in the range of about 1 to about 15;
a gate electrode; and
a gate dielectric positioned between the gate electrode and the channel and configured to permit application of an electric field to the channel.
13. The display device of claim 12 , wherein at least one of the drain electrode, the source electrode, the channel, the gate electrode, and the gate dielectric is substantially transparent.
14. A display device comprising:
a plurality of pixel devices configured to operate collectively to display images, where each of the pixel devices includes a semiconductor device configured to control light emitted by the pixel device, the semiconductor device including:
a drain electrode;
a source electrode;
a channel contacting the drain electrode and the source electrode, wherein the channel includes zinc-indium oxide having a mixed-phase crystalline state formed from compounds selected from the group consisting of ZnO,Zn x In 2y O x+3y , In 2 O 3 , and mixtures thereof;
a gate electrode; and
a gate dielectric positioned between the gate electrode and the channel and configured to permit application of an electric field to the channel.
15. The display device of claim 14 , wherein zinc-indium oxide includes ZnO:Zn x In 2y O x+3y :In 2 O 3 in a ratio of A:B:C, wherein A, B, and C are each in a range of about 0.025 to about 0.95.
16. A display device of comprising:
a plurality of pixel devices configured to operate collectively to display images, where each of the pixel devices includes a semiconductor device configured to control light emitted by the pixel device, the semiconductor device including:
a drain electrode;
a source electrode;
a channel contacting the drain electrode and the source electrode, wherein the channel includes zinc-indium oxide having an amorphous form from compounds selected from the group consisting of ZnO,Zn x In 2y O x+3y ,In 2 O 3 , and mixtures thereof;
a gate electrode; and
a gate dielectric positioned between the gate electrode and the channel and configured to permit application of an electric field to the channel.
17. The display device of claim 16 , wherein zinc-indium oxide includes an atomic composition of zinc and indium in a ratio of zinc(x):indium(1−x), wherein x is in the range of about 0.05 to about 0.95.