CMP conditioner
A CMP conditioner is provided in which diamond grit that is adhered to a conditioning surface so as to face and be in contact with a polishing pad of a CMP apparatus is adhered such that 111 surfaces of crystal surfaces of the diamond grit are substantially parallel with the conditioning surface and face in a direction faced by the conditioning surface.
1. A CMP conditioner in which diamond grit is adhered to a conditioning surface that faces and is in contact with a polishing pad of a CMP apparatus, wherein
the diamond grit is adhered such that 111 surfaces of crystal surfaces of the diamond grit are substantially parallel with the conditioning surface and face in a direction faced by the conditioning surface.
2. The CMP conditioner according to claim 1 , wherein, on the conditioning surface, a ratio of an X-ray diffraction intensity of the 111 crystal surfaces to a sum of the X-ray diffraction intensity of all measured crystal surfaces when an X-ray diffraction intensity of crystal surfaces of the diamond grit is measured at a plurality of measurement positions on the conditioning surface averages 70% or more at the plurality of measurement positions.
3. The CMP conditioner according to claim 1 , wherein a plurality of projections are formed on the conditioning surface and the diamond grit is adhered to the projections.
4. The CMP conditioner according to claim 2 , wherein a plurality of projections are formed on the conditioning surface and the diamond grit is adhered to the projections.
5. The CMP conditioner according to claim 1 , wherein a tetrafluoride organic compound is coated on the conditioning surface.
6. The CMP conditioner according to claim 2 , wherein a tetrafluoride organic compound is coated on the conditioning surface.
7. The CMP conditioner according to claim 3 , wherein a tetrafluoride organic compound is coated on the conditioning surface.
8. The CMP conditioner according to claim 4 , wherein a tetrafluoride organic compound is coated on the conditioning surface.