Polishing pad with flow modifying groove network
View Patent ↗A polishing pad ( 20 ) for polishing a wafer ( 32 ) or other article, the pad having a groove network ( 60 ) configured to vary the residence time across the wafer track of the reaction products formed by the interaction of reactants in the polishing medium ( 46 ) with structure on the wafer. The groove network has a first portion ( 72 ) that may extend substantially radially outward and a second portion ( 74 ) that is configured to vary the speed of the radially outward flow of the polishing medium.
1. A polishing pad useful for chemical mechanical polishing a wafer, the polishing pad comprising:
a. a polishing portion having a wafer track, a rotational axis and a plurality of grooves, each groove including:
i. a first portion; and
ii. a second portion positioned radially outward of the first portion in communication with the first portion at a transition location for increasing residence time of polishing medium in the second portion; and
b. wherein the transition location of at least a first one of the plurality of grooves is spaced a first radial distance from the rotational axis and the transition location of at least a second one of the plurality of grooves is spaced a second radial distance from the rotational axis, the first radial distance being different than the second radial distance and the transition locations of the plurality of grooves are positioned within the wafer track to have a different residence time of polishing medium within the first one the plurality of grooves across the polishing portion.
2. The pad according to claim 1 , wherein the plurality of grooves are arranged in at least two groups of grooves and each groove in the at least two groups of grooves has a transition location that is spaced a radial distance from the rotational axis that differs from the transition location of at least one other groove in the at least two groups of grooves.
3. The pad according to claim 2 , wherein the at least two groups of grooves have transition locations that have a progressive increase in radial spacing.
4. The pad according to claim 1 , wherein the transition locations of the plurality of grooves are spaced a plurality of different radial distances from the rotational axis and the transition locations have different residence times of polishing medium within the plurality of grooves across the polishing portion.
5. The pad according to claim 1 , wherein the first portion has a different configuration than the second portion, and at least one of the first and second portions has a major axis that extends outward from the rotational axis.
6. The pad according to claim 1 , wherein the second portion has a sinusoid configuration.
7. The pad according to claim 1 , wherein the second portion has a different depth than the first portion.
8. The pad according to claim 1 , wherein the second portion has a different width than the first portion.
9. A method of chemical mechanical polishing a wafer using a polishing pad having a rotational axis and a polishing medium, the method comprising the steps of:
providing a pad, the pad having a polishing portion having a wafer track, a rotational axis and a plurality of grooves, each groove including:
i. a first portion; and
ii. a second portion positioned radially outward of the first portion in communication with the first portion at a transition location for increasing residence time of polishing medium in the second portion; and
wherein the transition location of at least a first one of the plurality of grooves is spaced a first radial distance from the rotational axis and the transition location of at least a second one of the plurality of grooves is spaced a second radial distance from the rotational axis, the first radial distance being different than the second radial distance and the transition locations of the plurality of grooves are positioned within the wafer track to have a different residence time of polishing medium within the first one the plurality of grooves across the polishing portion;
b. engaging the pad with a surface of the wafer;
c. effecting relative rotation between the pad and the wafer so that a track of the pad contacts the wafer; and
d. causing the polishing medium to flow between the track of the pad and the surface of the wafer within the plurality of grooves with different residence times in at least two of the plurality of grooves.
10. The method according to claim 9 , wherein the plurality of grooves are arranged in at least two groups of grooves and each groove in the at least two groups of grooves has a transition location that is spaced a radial distance from the rotational axis that differs from the transition location of at least one other groove in the at least two groups of grooves.
11. The method according to claim 10 , wherein the at least two groups of grooves have transition locations that have a progressive increase in radial spacing to form blended residence times.
12. A polishing pad useful for chemical mechanical polishing a wafer with the use of a polishing medium, the pad comprising:
a. a polishing portion having rotational axis and a plurality of grooves, each groove including:
i. a first portion positioned radially outward of the first portion; and
ii. a second portion in communication with the first portion at a transition location, the second portion having a length and a cross-sectional configuration that varies along at least a portion of the length so as to increase residence time of polishing medium located in the second portion; and
b. wherein the transition location of each of the plurality of grooves is spaced one of a plurality of different radial distances from the rotational axis.
13. The pad according to claim 12 , wherein the cross-sectional configuration of the second portion increases in width beginning at the transition location.
14. The pad according to claim 12 , wherein the cross-sectional configuration increases from a first width to a second width, the second width increasing progressively from the transition location to locations radially outward of the transition location.
15. The pad according to claim 12 , wherein the cross-sectional configuration of the second portion decreases in width beginning at the transition location.