Frequency divider with variable capacitance
Method and apparatus for a frequency divider using variable capacitance are described.
1. A marker, comprising:
a first resonant circuit comprising a first planarized coil having a pair of terminals and a capacitor connected to said pair of terminals, said first resonant circuit to generate a first resonant signal in response to an interrogation signal; and
a second resonant circuit comprising a second planarized coil having a pair of terminals and a variable capacitor connected to said pair of terminals, with a portion of said second planarized coil to overlap a portion of said first planarized coil, said second resonant circuit to receive said first resonant signal and generate a second resonant signal having a second resonant frequency;
wherein said variable capacitor comprises a metal-oxide semiconductor device, said metal-oxide semiconductor device to operate as a non-linear capacitor having varying amounts of capacitance corresponding to varying amounts of voltage received by said metal-oxide semiconductor device; and
wherein said metal-oxide semiconductor device comprises a lamination of an insulation material and a semiconductor material disposed between metal terminals, and as said voltage applied across said terminals varies, a concentration of charge carriers in a region of said semiconductor material adjacent to said insulation material also varies to thereby vary said capacitance.
2. The marker of claim 1 , wherein said semiconductor material comprises an epitaxial layer having a first amount of doping adjacent to said insulation material, and a substrate having a second amount of doping between said epitaxial layer and one of said metal terminals.
3. The marker of claim 2 , wherein said first amount of doping is less than said second amount of doping.
4. The marker of claim 1 , wherein said second resonant frequency is less than said first resonant frequency.
5. The marker of claim 1 , wherein said second resonant frequency is approximately half of said first resonant frequency.
6. The marker of claim 1 , wherein said interrogation signal operates at approximately 13.56 Megahertz.
7. The marker of claim 1 , wherein said first resonant frequency comprises approximately 13.56 Megahertz, and said second resonant frequency comprises approximately 6.78 Megahertz.
8. The marker of claim 1 , wherein said metal terminals comprises at least one of a group of materials including Au, Mo, Ta and polysilicon.
9. The marker of claim 1 , wherein said marker is developed using a printed semiconductor process.
10. A system, comprising:
a transmitter to transmit an interrogation signal operating at a first frequency;
a security tag having a marker, said marker comprising:
a first resonant circuit comprising a first planarized coil having a pair of terminals and a capacitor connected to said pair of terminals, said first resonant circuit to generate a first resonant signal in response to said interrogation signal;
a second resonant circuit comprising a second planarized coil having a pair of terminals and a variable capacitor connected to said pair of terminals, with a portion of said second planarized coil to overlap a portion of said first planarized coil, said second resonant circuit to receive said first resonant signal and generate a second resonant signal having a second resonant frequency;
wherein said variable capacitor comprises a metal-oxide semiconductor device, said metal-oxide semiconductor device to operate as a non-linear capacitor having varying amounts of capacitance corresponding to varying amounts of voltage received by said metal-oxide semiconductor device; and
a detector to detect said second resonant signal from said marker and generate a detection signal in accordance with said second resonant signal;
wherein said metal-oxide semiconductor device comprises a lamination of an insulation material and a semiconductor material disposed between metal terminals, and as said voltage applied across said terminals varies, a concentration of charge carriers in a region of said semiconductor material adjacent to said insulation material also varies to thereby vary said capacitance.
11. The system of claim 10 , wherein said semiconductor material comprises an epitaxial layer having a first amount of doping adjacent to said insulation material, and a substrate having a second amount of doping between said epitaxial layer and one of said metal terminals.
12. The system of claim 11 , wherein said first amount of doping is less than said second amount of doping.
13. The system of claim 10 , wherein said second resonant frequency is less than said first resonant frequency.
14. The system of claim 10 , wherein said second resonant frequency is approximately half of said first resonant frequency.
15. The system of claim 10 , wherein said interrogation signal operates at approximately 13.56 Megahertz.
16. The system of claim 10 , wherein said first resonant frequency comprises approximately 13.56 Megahertz, and said second resonant frequency comprises approximately 6.78 Megahertz.
17. The system of claim 10 , wherein said metal terminals comprises at least one of a group of materials including Au, Mo, Ta and polysilicon.
18. The system of claim 10 , further comprising an alarm system to connect to said receiver, said alarm system to receive said detection signal and generate an alarm in response to said detection signal.
19. The system of claim 10 , wherein said marker is developed using a printed semiconductor process.
20. A method, comprising:
receiving an interrogation signal at a first resonant circuit for a marker;
generating a first resonant signal having a first resonant frequency in response to the interrogation signal;
receiving said first resonant signal at a second resonant circuit overlapping said first resonant circuit; and
generating a second resonant signal having a second resonant frequency in response to said first resonant signal using variable capacitance, with said second resonant frequency being different from said first resonant frequency;
wherein the variable capacitance is provided by a metal-oxide semiconductor device, the metal-oxide semiconductor device comprising a lamination of an insulation material and a semiconductor material disposed between metal terminals, and as a voltage applied across the terminals varies, a concentration of charge carriers in a region of the semiconductor material adjacent to the insulation material also varies to thereby vary the capacitance.
21. The method of claim 20 , wherein said second resonant frequency is less than said first resonant frequency.
22. The method of claim 20 , wherein said second resonant frequency is approximately half of said first resonant frequency.
23. The method of claim 20 , wherein said interrogation signal operates at approximately 13.56 Megahertz.
24. The method of claim 20 , wherein said first resonant frequency comprises approximately 13.56 Megahertz, and said second resonant frequency comprises approximately 6.78 Megahertz.