Thermal interface apparatus, systems, and methods

1. An apparatus, comprising:

a die;

a heat spreader mounted adjacent the die;

a buffer layer comprising a film selected from the group consisting of Cr, Mo, Ti, SiC and TiC and wherein the buffer layer also comprises a catalyst for carbon nanotube growth selected from the group consisting of at least one of Co, Fe and Ni formed above a surface of the heat spreader; and

a thermal interface material interposed in a gap between the die and the heat spreader; the thermal interface material comprising an array of carbon nanotubes formed above the buffer layer; and

a further buffer layer of at least one material selected from the group comprising Au and Ag, interposed between the interface material and the die.

2. The apparatus of claim 1 , wherein selected carbon nanotubes of the array of carbon nanotubes are bonded to adjacent carbon nanotubes of the array of carbon nanotubes.

3. The apparatus of claim 1 , wherein a portion of at least some carbon nanotubes of the array of carbon nanotubes are coated with metal.

4. The apparatus of claim 1 , wherein the length of at least some of the carbon nanotubes are under compression.

5. The apparatus of claim 1 , wherein free ends of at least some of the carbon nanotubes project from the thermal intermediate material to embed them in the surface of the heat spreader.

6. The apparatus of claim 1 wherein the gap between the die and the heat spreader is established by the height of a spacer inserted in the gap.

7. A computing system, comprising:

a die including a die surface and a circuit;

a heat sink;

at least one dynamic random access memory device; and

a buffer layer comprising a film selected from the group consisting of Cr, Mo, Ti, SiC and TiC, wherein the buffer layer also comprises a catalyst for carbon nanotube growth selected from the group consisting of at least one of Co, Fe and Ni formed above a surface of the heat sink;

a thermal interface material interposed in a gap between the die and the heat sink; the thermal interface material comprising an array of carbon nanotubes formed above the buffer layer; and

a further buffer layer of at least one material selected from the group comprising Au and Ag, interposed between the interface material and the die.

8. The system of claim 7 , wherein the circuit comprises a processor that acts upon data signals.

9. The system of claim 8 , wherein the processor includes a microprocessor.

10. An apparatus, comprising:

a die;

a heat spreader mounted adjacent the die;

a buffer layer comprising a film selected from the group consisting of Cr, Mo, Ti, SiC and TiC and wherein the buffer layer also comprises a catalyst for carbon nanotube growth selected from the group consisting of at least one of Co, Fe and Ni formed on a surface of the heat spreader;

a thermal interface material interposed in a gap between the die and the heat spreader; the thermal interface material comprising an array of carbon nanotubes formed in contact with the buffer layer; and

a further buffer layer of at least one material selected from the group comprising Au and Ag, interposed between the interface material and the die.

11. The apparatus of claim 10 , wherein selected carbon nanotubes of the array of carbon nanotubes are bonded to adjacent carbon nanotubes of the array of carbon nanotubes.

12. The apparatus of claim 10 , wherein a portion of at least some carbon nanotubes of the array of carbon nanotubes are coated with metal.

13. The apparatus of claim 10 , wherein the length of at least some of the carbon nanotubes are under compression.

14. The apparatus of claim 10 , wherein free ends of at least some of the carbon nanotubes project from the array of carbon nanotubes to embed them in the surface of the heat spreader.

15. The apparatus of claim 10 wherein the gap between the die and the heat spreader is established by the height of a spacer inserted in the gap.