Polysilane thin films for directly patternable waveguides
A waveguide structure includes a substrate. A layer of high index material includes polysilane, which is patterned using a UV light source to form a waveguide.
1. A waveguide structure comprising:
a substrate; and
a waveguide layer comprising polysilane formed using a CVD process said, said waveguide layer having a size between 2 μm and 5 μm;
a cladding layer that includes a low index material that substantially encompasses said waveguide layer, which is patterned using a UV light source to form said waveguide structure; and
said waveguide layer acts as an interconnection layer that is coupled to said cladding layer so as to interconnect said waveguide structure to at least one photonic device having an ontical core with a diameter less than 10 μm and said waveguide layer allowing the transmission of an optical signal with a wavelength greater than 400 nm.
2. The waveguide structure of claim 1 , wherein said substrate comprises a high index substrate.
3. The waveguide structure of claim 2 , wherein said high index substrate comprises a silicon substrate.
4. The waveguide structure of claim 1 , wherein said substrate comprises a low index substrate.
5. The waveguide structure of claim 4 , wherein said low index substrate comprises a glass or plastic substrate.
6. The waveguide structure of claim 1 , wherein said cladding comprises SiO 2 or OSG.
7. The waveguide structure of claim 6 further comprising a low index layer provided on said waveguide layer of high index materials.
8. The waveguide structure of claim 1 , wherein said waveguide layer is formed using PECVD.
9. The waveguide structure of claim 1 , wherein said polysilane is formed using a pyrolytic CVD process.
10. A method of forming a waveguide structure, said method comprising:
providing a substrate;
forming a waveguide layer comprising polysilane using a CVD process, said waveguide layer having a size between 2 μm and 5 μm;
forming a cladding layer comprising a low index material; and
patterning said polysilane of said waveguide layer using a UV light source to form said waveguide structure;
wherein said waveguide layer acts as an interconnection layer that is coupled to said cladding layer so as to interconnect said waveguide structure to at least one photonic device having an optical core with a diameter less than 10 μm and allowing the transmission of an optical signal with a wavelength greater than 400 nm.
11. The method of claim 10 , wherein said substrate comprises a high index substrate.
12. The method of claim 11 , wherein said high index substrate comprises a silicon substrate.
13. The method of claim 10 , wherein said substrate comprises a low index substrate.
14. The method of claim 10 , wherein said substrate comprises a glass or plastic substrate.
15. The method of claim 10 , wherein said cladding comprises SiO 2 or OSG.
16. The method of claim 15 further comprising a low index layer provided on said waveguide layer of high index materials.
17. The method of claim 10 , wherein said polysilane is formed using PECVD.
18. The method of claim 10 , wherein said waveguide layer is formed using a pyrolytic CVD process.