Indium oxide-based thin film transistors and circuits
View Patent ↗In electronic displays or imaging units, the control of pixels is achieved by an array of transistors. These transistors are in a thin film form and arranged in a two-dimensional configuration to form switching circuits, driving circuits or even read-out circuits. In this invention, thin film transistors and circuits with indium oxide-based channel layers are provided. These thin film transistors and circuits may be fabricated at low temperatures on various substrates and with high charge carrier mobilities. In addition to conventional rigid substrates, the present thin film transistors and circuits are particularly suited for the fabrication on flexible and transparent substrates for electronic display and imaging applications. Methods for the fabrication of the thin film transistors with indium oxide-based channels are provided.
1. An indium tin oxide thin film transistor for forming a switching array or a circuit comprising:
a first substrate;
a first conductive gate layer;
a first gate insulating layer overlapping at least a portion of said first conductive gate layer;
a source electrode overlapping a first portion of said first gate insulating layer;
a drain electrode overlapping a second portion of said first gate insulating layer; and
an indium tin oxide channel layer overlapping a portion of said first gate insulating layer, overlapping at least a portion of said source electrode and at least a portion of said drain electrode.
2. An indium tin oxide thin film transistor for forming a switching array or a circuit as defined in claim 1 , wherein said first substrate is selected from a group comprising: glass substrates, silica substrates, plastic sheets, metallic sheets with a dielectric coating, ceramic substrates and semiconductor substrates.
3. An indium oxide-based thin film transistor for forming a switching array or a circuit as defined in claim 1 , wherein material of said indium oxide-based channel layer is selected from a group comprising: indium tin oxide, indium gallium oxide and their alloys.
4. An indium tin oxide thin film transistor for forming a switching array or a circuit as defined in claim 1 further comprising at least a first interlayer dielectric layer, said first interlayer dielectric layer overlaps at least a portion of said indium tin oxide channel layer, a portion of said source electrode and a portion of said drain electrode for electrical isolation and passivation.
5. An indium tin oxide thin film transistor for forming a switching array or a circuit as defined in claim 1 , further comprising a thin substrate dielectric layer, said thin substrate dielectric layer being introduced between said indium tin oxide channel layer and said first substrate, to minimize elemental inter-diffusion between said indium tin oxide channel layer and said first substrate.
6. An indium tin oxide thin film transistor for forming a switching array or a circuit as defined in claim 1 , further comprising a first light shield layer deposited below said indium tin oxide channel layer and a second light shield layer deposited above said indium tin oxide channel layer, said first light shield and second light shield being selected from a group of materials: Al, Cu, Ni, Ti, Ta, W, Cr, Mo, alloys and combinations, said first light shield and second light shield are substantially non-transmissive to ultra-violet light and visible light and are deposited to minimize generations of electron hole pairs due to illumination of said indium tin oxide channel layer.
7. An indium tin oxide thin film transistor for forming a switching array or a circuit as defined in claim 1 , further comprising a first contact layer between said source electrode and said indium tin oxide channel layer to minimize contact resistance of said source electrode, and a second contact layer between said drain electrode and said indium tin oxide channel layer to minimize contact resistance of said drain electrode.
8. An indium tin oxide thin film transistor for forming a switching array or a circuit as defined in claim 1 , further comprising a second gate insulating layer and a second conductive gate layer to facilitate modulation of electrical conduction of said indium tin oxide channel layer.
9. An indium tin oxide thin film transistor for forming a switching array or a circuit as defined in claim 1 , further comprising a second substrate having a top electrode, said second substrate being installed on said first substrate to enclose and protect said switching array or said circuit and light emitting elements or light switching elements.
10. An indium tin oxide thin film transistor for forming a switching array or a circuit as defined in claim 1 , wherein said first conductive gate layer overlaps at least a portion of said first gate insulating layer, a portion of said source electrode and a portion of said drain electrode, said first gate insulating layer overlaps at least a portion of said indium tin oxide channel layer, forming a top-gate thin film transistor structure having an indium tin oxide channel layer.
11. An indium tin oxide thin film transistor for forming a switching array or a circuit as defined in claim 1 , wherein said indium tin oxide channel layer is deposited on said first gate insulating layer, said first gate insulating layer overlaps at least a portion of said first conductive gate layer, a portion of said source electrode and a portion of said drain electrode, forming a bottom-gate thin film transistor structure having an indium tin oxide channel layer.
12. An indium tin oxide thin film transistor for forming a switching array or a circuit as defined in claim 1 , further comprising a pixel electrode, said pixel electrode forming a part of a light switching or receiving element and being connected electrically to said drain electrode and is selected from a material group comprising: indium tin oxide, indium oxide, zinc oxide and their alloys.
13. An indium tin oxide thin film transistor for forming a switching array or a circuit as defined in claim 1 , further comprising a data line and a gate line, said data line being connected electrically to drain electrodes of a plurality of said indium tin oxide thin film transistors whereas said gate line being connected electrically to gate electrodes of said indium tin oxide thin film transistors for control and addressing of light switching and receiving elements connected to said drain electrodes.