Sputtering apparatus
A sputtering apparatus for forming a film by a physical gas-phase growth on a substrate having a irregular or flat shape is provided including three or more axes for independently varying a relative positional relationship between a substrate and a cathode in the course of film formation.
1. A sputtering apparatus for forming a film on a substrate by physical gas-phase growth comprising:
(a) a vacuum chamber;
(b) a cathode unit holding a target set inside the vacuum chamber and provided with a revolving mechanism for controllably revolving the target opposite to the substrate; and
(c) a substrate-holding unit inside the vacuum chamber to support the substrate facing the target,
wherein the substrate-holding unit has a substrate rotary drive system having a rotating axis for rotating the substrate and a scan drive system having a swing scan axis which is the same as the rotating axis for executing swing scanning of the substrate around the axis of the substrate and wherein the cathode unit revolves and the substrate-holding unit rotates and executes swing scanning to support the substrate facing the target such that a line perpendicular to the surface of the substrate is maintained perpendicular to the surface of the target while sputtering is executed.
2. A sputtering apparatus according to claim 1 , wherein the cathode unit holds plural targets and is provided with a revolving mechanism for controllably revolving the target opposite to the substrate.
3. A sputtering apparatus according to claim 2 , wherein a rotary axis of the substrate is in the X-axis direction, a revolving axis of the cathode unit is in the Y-axis direction, and the rotary axis of the substrate and the revolving axis of the cathode unit are offset in the Z-axis direction.
4. A sputtering apparatus according to claim 3 , wherein the substrate-holding unit has a T-S drive system for moving the substrate in the X-axis direction to adjust a distance between the substrate and the target.
5. A sputtering apparatus according to claim 2 , wherein an adjusting mechanism for rendering a film-forming rate and a film-forming area variable is spaced between the cathode unit and the substrate-holding unit.
6. A sputtering apparatus according to claim 5 , wherein the adjusting mechanism is a movable mask.
7. A sputtering apparatus according to claim 5 , wherein the adjusting mechanism is a collimator capable of changing its angle.
8. A method for forming a film on a substrate by physical gas-phase growth with a sputtering apparatus having a vacuum chamber, a cathode unit holding a target inside the vacuum chamber and provided with a revolving mechanism for controllably revolving the target and a substrate-holding unit inside the vacuum chamber, comprising:
(a) supporting the substrate with the substrate-holding unit having a substrate rotary drive system for rotating the substrate and a scan drive system for executing swing scanning of the substrate;
(b) supplying sputtering gases to the vacuum chamber; and
(c) sputtering the target to form a film on the substrate, wherein the cathode unit rotates, and the substrate-holding unit rotates and executes swing scanning to support the substrate facing the target such that a line perpendicular to the surface of the substrate is maintained perpendicular to the film-forming face of the target while sputtering is conducted.