Ultra-uniform silicide system in integrated circuit technology
A structure of an integrated circuit is provided. A gate dielectric is formed on a semiconductor substrate, and a gate is formed over a gate dielectric on the semiconductor substrate. Source/drain junctions are formed in the semiconductor substrate. Ultra-uniform suicides are formed on the source/drain junctions, and a dielectric layer is deposited above the semiconductor substrate. Contacts are then formed in the dielectric layer to the ultra-uniform silicides.
1. An integrated circuit comprising:
a semiconductor substrate having source/drain junctions;
a gate dielectric on the semiconductor substrate;
a gate over the gate dielectric;
ultra-uniform silicides on the source/drain junctions;
a dielectric layer above the semiconductor substrate; and
contacts in the dielectric layer to the ultra-uniform silicides.
2. The integrated circuit as claimed in claim 1 wherein:
the ultra-uniform silicides is an ultra-thin thickness of a silicide metal of not more than 50 Å thick.
3. The integrated circuit as claimed in claim 1 wherein:
the dielectric layer deposits a dielectric material having a dielectric constant selected from a group consisting of medium, low, and ultra-low dielectric constants.
4. The integrated circuit as claimed in claim 1 wherein:
the contacts to the ultra-uniform silicides are of materials selected from a group consisting of tantalum, titanium, tungsten, copper, gold, silver, an alloy thereof, a compound thereof, and a combination thereof.
5. An integrated circuit comprising:
a silicon substrate having source/drain junctions;
a gate oxide on the silicon substrate;
a polysilicon gate over the gate oxide;
an ultra-uniform nickel silicide on the source/drain junctions and the polysilicon gate, the ultra-uniform nickel silicide having no variations in thickness greater than 3% of the overall thickness;
a dielectric layer above the silicon substrate; and
contacts in the dielectric layer to the ultra-uniform nickel silicide.
6. The integrated circuit as claimed in claim 5 wherein:
the ultra-uniform nickel silicide is an ultra-thin thickness of a silicide metal of not more than 50 Å thickness.
7. The integrated circuit as claimed in claim 5 wherein:
the dielectric layer is a dielectric material having a dielectric constant below 4.2.
8. The integrated circuit as claimed in claim 5 wherein:
the contacts to the ultra-uniform silicides are of materials selected from a group consisting of tantalum, titanium, tungsten copper, gold, silver, an alloy thereof, a compound thereof, and a combination thereof.