Light emitting diode
A light emitting diode. The light emitting diode comprises a lead frame and an LED chip therein. Packaging material in the lead frame is covers the LED chip. A plurality of ZnX quantum dots dispersed in the packaging material, wherein X is S, Se, Te or a combination thereof. A plurality of organic molecules covers each ZnX quantum dot.
1. A light emitting diode, comprising:
a lead frame;
an LED chip in the lead frame;
packaging material in the lead frame covering the LED chip;
a plurality of ZnX quantum dots dispersed in the packaging material, wherein X is S, Se, Te or a combination thereof; and
a plurality of organic molecules, other than the packaging material, covering each ZnX quantum dot;
wherein the organic molecules are aliphatic compounds or phospholipids.
2. The light emitting diode as claimed in claim 1 , wherein the packaging material comprises resin or epoxy.
3. The light emitting diode as claimed in claim 1 , wherein the ZnX quantum dot is smaller than 20 nm.
4. The light emitting diode as claimed in claim 1 , wherein the ZnX quantum dots are further doped with a dopant.
5. The light emitting diode as claimed in claim 4 , wherein the dopant comprises transition elements, halogens or a combination thereof.
6. The light emitting diode as claimed in claim 1 , wherein the ZnX quantum dots dispersed in the packaging material form a plurality of clusters, each cluster smaller than 100 nm.
7. A white light emitting diode, comprising:
a lead frame;
an LED chip in the lead frame;
packaging material in the lead frame covering the LED chip;
a plurality of ZnX quantum dots dispersed in the packaging material, wherein X is S, Se, Te or a combination thereof; and
a plurality of organic molecules, other than the packaging material, covering each ZnX quantum dot;
wherein the organic molecules are aliphatic compounds or phospholipids.
8. The light emitting diode as claimed in claim 7 , wherein the packaging material comprises resin or epoxy.
9. The light emitting diode as claimed in claim 7 , wherein the ZnX quantum dot is smaller than 20 nm.
10. The light emitting diode as claimed in claim 7 , wherein the ZnX quantum dots are further doped with a dopant.
11. The light emitting diode as claimed in claim 10 , wherein the dopant comprises transition elements, halogens or a combination thereof.
12. The light emitting diode as claimed in claim 7 , wherein the ZnX quantum dots dispersed in the packaging material form a plurality of clusters, each cluster smaller than 100 nm.
13. the light emitting diode as claimed in claim 12 , wherein the LED chip comprises GaN, ZnSe or SiC.
14. The light emitting diode as claimed in claim 7 , wherein the LED chip comprises GaN, ZnSe or SiC.