Method of forming a semiconductor device
A sidewall spacer structure is formed adjacent to a gate structure whereby a material forming an outer surface of the sidewall spacer structure contains nitrogen. Subsequent to its formation the sidewall spacer structure is annealed to harden the sidewall spacer structure from a subsequent cleaning process. An epitaxial layer is formed subsequent to the cleaning process.
1. A method of manufacturing a semiconductor device, the method comprising:
forming a sidewall spacer structure adjacent to a sidewall of a conductive gate structure overlying a semiconductor substrate at a transistor location;
forming an epitaxial layer at a source/drain location defined by an outer surface of the sidewall spacer structure;
annealing the sidewall spacer structure before forming the epitaxial layer; and
implanting a dopant after forming the epitaxial layer to facilitate formation of a source/drain region associated with the transistor location.
2. The method of claim 1 wherein annealing the sidewall spacer structure comprises annealing the sidewall spacer structure using a rapid thermal anneal.
3. The method of claim 2 wherein the rapid thermal anneal comprises a temperature greater than approximately 400 degrees Celsius.
4. The method of claim 3 wherein the rapid thermal anneal is performed in less than approximately 40 seconds.
5. The method of claim 4 further comprising:
exposing the sidewall spacer structure to an HF solution subsequent to annealing and prior to forming the epitaxial layer.
6. The method of claim 5 wherein forming the first sidewall structure comprises forming a first sidewall spacer and forming a second sidewall spacer containing nitrogen, wherein the first sidewall spacer is between the second sidewall spacer and the conductive gate structure.
7. The method of claim 6 wherein the dopant is a second dopant implanted after forming the second sidewall spacer; and claim 6 further comprising:
implanting a first dopant subsequent to forming the first sidewall spacer to facilitate formation of an extension region associated with the transistor location.
8. The method of claim 1 wherein the semiconductor substrate is a silicon-on-insulator substrate.
9. The method of claim 2 wherein the rapid thermal anneal comprises a maximum temperature of approximately 850 to 1000 degrees Celsius, and an anneal time of less than 10 seconds.
10. The method of claim 2 wherein the rapid thermal anneal comprises a maximum temperature of approximately 400-4100 degrees Celsius.
11. The method of claim 10 wherein the rapid thermal anneal is performed in less than 40 seconds.
12. The method of claim 1 further comprising:
exposing the sidewall spacer structure to an HF solution subsequent to annealing and prior to forming the epitaxial layer.
13. The method of claim 1 wherein forming the first sidewall structure comprises forming a first sidewall spacer and forming a second sidewall spacer containing nitrogen, wherein the first sidewall spacer is between the second sidewall spacer and the conductive gate structure.
14. The method of claim 13 wherein the dopant is a second dopant implanting after forming the second sidewall spacer; and claim 13 further comprising implanting a first dopant after forming the first sidewall spacer to facilitate formation of an extension region associated with the transfer location.
15. A method of manufacturing a semiconductor device comprising:
forming a conductive gate overlying a semiconductor substrate at a transistor location;
forming a sidewall spacer structure abutting the conductive gate, wherein a material forming an outer surface of the sidewall spacer structure contains nitrogen;
hardening the outer surface of the offset spacer;
forming an epitaxial layer after hardening the outer surface, wherein a location of the sidewall spacer structure is defined by the outer surface of the sidewall spacer structure; and
implanting a dopant to facilitate forming a source/drain region of the gate structure subsequent to hardening the outer surface.
16. A method of manufacturing a semiconductor device, the method comprising:
forming a sidewall spacer structure adjacent to a sidewall of a conductive gate structure overlying a semiconductor substrate at a transistor location, wherein forming the first sidewall structure comprises forming a first sidewall spacer and forming a second sidewall spacer containing nitrogen, wherein the first sidewall spacer is between the second sidewall spacer and the conductive gate structure;
forming an epitaxial layer at a source/drain location defined by an outer surface of the sidewall spacer structure;
annealing the sidewall spacer structure before forming the epitaxial layer; and
implanting a first dopant after forming the first sidewall spacer to facilitate formation of an extension region associated with the transfer location.