CMOS output driver using floating wells to prevent leakage current

1. An I/O buffer circuit comprising: a driver circuit containing a first pull-up device in a first floating well, a first pull-down device in a second floating well, a second pull-up device in an output stage and a second pull-down device in the output stage; first and second biasing circuits to bias the first and second floating wells in response to voltages internal and external to the I/O buffer circuit; a first feedback loop operative to raise a gate voltage of the second pull-up device when a PAD voltage exceeds 3.3 volts; a second feedback loop operative to lower a gate voltage of the second pull-down device when the PAD voltage is less than ground; and a first and second tracking circuits to bias each of the second pull-up and the second pull-down devices in response to voltages internal and external to the I/O buffer circuit in a shutdown mode, wherein the first and second tracking circuits are operative to prevent greater than 3.3 volts across nodes in the first and second floating wells.

2. The circuit of claim 1 , wherein the driver circuit further comprises one or more transistors in series.

3. The circuit of claim 2 , wherein the first and second biasing circuits comprise one or more transistors in series.

4. The circuit of claim 3 , wherein the first and second tracking circuits comprise one or more transistors in parallel.

5. The circuit of claim 4 , wherein the first floating well is a n-well and the second floating well is a p-well.

6. The circuit of claim 5 , wherein the I/O buffer circuit provides overvoltage and undervoltage protection.

7. The circuit of claim 6 , wherein two pFET transistors control a voltage of the n-well and two nFET transistors control a voltage of the p-well.