Semiconductor apparatus and method of fabricating the apparatus
A via hole is formed by a first step of forming an opening in a resin insulating film by laser radiation, a second step of forming an opening in said resin insulating film by dry etching and a third step of performing reverse sputtering in a plasma environment.
1. A method of fabricating a semiconductor apparatus, comprising:
forming a via hole in a resin insulating film formed on a circuit element provided with electrode pads so as to expose said electrode pads; and
introducing a conductive material in said via hole for connection with said electrode pads, wherein
the forming of said via hole includes forming an opening in said resin insulating film by applying laser radiation to the resin insulating film, and subsequently dry etching and forming a recess in said electrode pads,
wherein applying the laser radiation comprises applying a first laser to the resin insulating film and subsequently applying a second laser to the resin insulating film characterized by a speed in processing the insulating resin film slower than that of the first laser.
2. The method of fabricating a semiconductor apparatus according to claim 1 , wherein
said semiconductor apparatus further includes a conductive film formed on said resin insulating film, and
the forming of said via hole includes removing a portion of said conductive film and using said conductive film as a mask.
3. The method of fabricating a semiconductor apparatus according to claim 1 , wherein forming an opening in said resin insulating film comprises applying a CO 2 gas laser to the resin insulating film and applying a YAG laser to the insulating film.
4. The method of fabricating a semiconductor apparatus according to claim 2 , wherein forming an opening in said resin insulating film comprises applying a CO 2 gas laser to the resin insulating film and applying a YAG laser to the resin insulating film.
5. The method of fabricating a semiconductor apparatus according to claim 1 , wherein the forming of said via hole includes performing reverse sputtering in a plasma environment.
6. The method of fabricating a semiconductor apparatus according to claim 2 , wherein the forming of said via hole includes performing reverse sputtering in a plasma environment.
7. The method of fabricating a semiconductor apparatus according to claim 3 , wherein the forming of said via hole includes performing reverse sputtering in a plasma environment.
8. The method of fabricating a semiconductor apparatus according to claim 4 , wherein the forming of said via hole includes performing reverse sputtering in a plasma environment.
9. The method of fabricating a semiconductor apparatus according to claim 1 wherein the recess is formed by dry etching.