IP Library Granted Patent US 7,535,536
Granted Patent B2
US 7,535,536 · App. 11/929,159 · Granted May 19, 2009

Display device

Assignee: Hitachi, Ltd.
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Quick Facts
Patent No.
US 7,535,536
App. No.
11/929,159
Granted
May 19, 2009
Kind
B2
Abstract

A display device includes a substrate, a gate line formed over the substrate, a first insulating film formed over the substrate and the gate line, a semiconductor film formed over the first insulating film, a drain electrode formed over the semiconductor film, a source electrode formed over the semiconductor film, a data line connected to the drain electrode and formed over the first insulating film, a second insulating film formed over the source electrode and the data line, a pixel electrode electrically connected to the source electrode and formed over the second insulating film, and a transparent conductive film connected to the data line through a contact hole formed in the second insulating film. The transparent conductive film includes a first portion which none of the first insulating film and the second insulating film underlie.

Claims (54)

1. A display device comprising:

a substrate;

a gate line formed over the substrate;

a first insulating film formed over the substrate and the gate line;

a thin film transistor having a semiconductor film formed over the first insulating film and comprising an i-type semiconductor and an impurity-doped semiconductor;

a drain electrode formed over the semiconductor film;

a source electrode formed over the semiconductor film;

a data line connected to the drain electrode and formed over the first insulating film;

a second insulating film formed over the source electrode and the data line;

a pixel electrode electrically connected to the source electrode and formed over the second insulating film; and

a transparent conductive film connected to the data line through a contact hole formed in the second insulating film,

wherein the transparent conductive film includes a first portion which none of the first insulating film and the second insulating film underlie, and

wherein in a channel region of said semiconductor film of said thin film transistor where said source electrode and said drain electrode are disposed to oppose each other, said impurity-doped semiconductor extends beyond said source electrode and said drain electrode in a direction of extension of a length of said channel of said semiconductor layer and said i-type semiconductor extends beyond said impurity-doped semiconductor in said direction of extension of a length of said channel.

2. A display device according to claim 1 , wherein the transparent conductive film is electrically connected to an external drive circuit.

3. A display device according to claim 1 ,

wherein the transparent conductive film includes a first edge disposed between the contact hole and the gate line, and

wherein a distance from the contact hole to the first portion is greater than a distance from the contact hole to the first edge.

4. A display device according to claim 3 , wherein a lower surface of the transparent conductive film in the first portion is nearer to a surface of the substrate than a lower surface the transparent conductive film in the contact hole.

5. A display device according to claim 1 , wherein the semiconductor film is formed between the data line and the first insulating film.

6. A display device according to claim 5 , wherein the semiconductor film comprises an i-type semiconductor layer and an impurity doped semiconductor layer disposed between the i-type semiconductor layer and the data line.

7. A display device according to claim 6 ,

wherein the transparent conductive film includes a first edge disposed between the contact hole and the gate line, and

wherein a distance from the contact hole to the first portion is greater than a distance from the contact hole to the first edge.

8. A display device according to claim 6 , wherein a lower surface of the transparent conductive film in the first portion is nearer to a surface of the substrate than a lower surface of the transparent conductive film in the contact hole.

9. A display device according to claim 6 , wherein the i-type, semiconductor layer extends beyond an end portion of the data line.

10. A display device according to claim 9 , wherein the transparent conductive film is connected to the data line through the contact hole formed in the second insulating film adjacent to the end portion.

11. A display device comprising:

a substrate;

a gate line formed over the substrate;

a first insulating film formed over the substrate and the gate line;

a thin film transistor having a semiconductor film formed over the first insulating film and comprising an i-type semiconductor and an impurity-doped semiconductor;

a drain electrode formed over the semiconductor film;

a source electrode formed over the semiconductor film;

a data line connected to the drain electrode and formed over the first insulating film;

a second insulating film formed over the source electrode and the data line;

a pixel electrode electrically connected to the source, electrode and formed over the second insulating film; and

a transparent conductive film connected to the data line through a contact hole formed in the second insulating film,

wherein the transparent conductive film includes a first portion which none of the first insulating film and the second insulating film underlie,

wherein in a channel region of said semiconductor film of said thin film transistor where said source electrode and said drain, electrode are disposed to oppose each other, said impurity-doped semiconductor extends beyond said source electrode and said drain electrode in a direction of extension of a length of said channel of said semiconductor layer and said i-type semiconductor extends beyond said impurity-doped semiconductor in said direction of extension of a length of said channel,

wherein said impurity-doped semiconductor extends beyond an end of a portion of said source electrode overlying said pixel electrode on a side of said source electrode opposite from said channel region in said direction of extension of a length of said channel, and

wherein said i-type semiconductor extends beyond said impurity-doped semiconductor in said direction of extension of a length of said channel.

12. A display device according to claim 11 , wherein the transparent conductive film is electrically connected to an external drive circuit.

13. A display device according to claim 11 ,

wherein the transparent conductive film includes a first edge disposed between the contact hole and the gate line, and

wherein a distance from the contact hole to the first portion is greater than a distance from the contact hole to the first edge.

14. A display device according to claim 13 , wherein a lower surface of the transparent conductive film in the first portion is nearer to a surface of the substrate than a lower surface of the transparent conductive film in the contact hole.

15. A display device according to claim 11 , wherein the semiconductor film is formed between the data line and the first insulating film.

16. A display device according to claim 15 , wherein the semiconductor film comprises an i-type semiconductor layer and an impurity doped semiconductor layer disposed between the i-type semiconductor layer and the data line.

17. A display device according to claim 16 ,

wherein the transparent conductive film includes a first edge disposed between the contact hole and the gate line, and

wherein a distance from the contact hole to the first portion is greater than a distance from the contact hole to the first edge.

18. A display device according to claim 16 , wherein a lower surface of the transparent conductive film in the first portion is nearer to a surface of the substrate than a lower surface of the transparent conductive film in the contact hole.

19. A display device according to claim 16 , wherein the i-type semiconductor layer extends beyond an end portion of the data line.

20. A display device according to claim 19 , wherein the transparent conductive film is connected to the data line through the contact hole formed in the second insulating film adjacent to the end portion.

Assignments (3)
COMPANY SPLIT PLAN TRANSFERRING FIFTY (50) PERCENT SHARE OF PATENTS AND PATENT APPLICATIONS Recorded Dec 12, 2011
From: HITACHI DISPLAYS, LTD.
To: IPS ALPHA SUPPORT CO., LTD.
Reel/Frame 027362/0466 →
COMPANY SPLIT PLAN TRANSFERRING ONE HUNDRED (100) PERCENT SHARE OF PATENT AND PATENT APPLICATIONS Recorded Dec 12, 2011
From: HITACHI, LTD.
To: HITACHI DISPLAYS, LTD.
Reel/Frame 027362/0612 →
MERGER/CHANGE OF NAME Recorded Dec 12, 2011
From: IPS ALPHA SUPPORT CO., LTD.
To: PANASONIC LIQUID CRYSTAL DISPLAY CO., LTD.
Reel/Frame 027363/0315 →
Priority Claims (1)
JP 7-188783 · Jul 25, 1995 · national
Continuity (10)
Continuation 1133885300 · Jan 25, 2006
Continuation 1099049700 · Nov 18, 2004
Continuation 1066069600 · Sep 12, 2003
Continuation 1015890200 · Jun 3, 2002
Continuation 1011808100 · Apr 9, 2002
Continuation 0971726500 · Nov 22, 2000
Continuation 0934217400 · Jun 29, 1999
Continuation 0920774200 · Dec 8, 1998
Continuation 0868340800 · Jul 19, 1996
Related Publication 20080067513A1 · Mar 20, 2008