Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications
A thin film transistor (TFT) includes a source electrode, a drain electrode, and a gate electrode. A gate insulator is coupled to the source electrode, drain electrode, and gate electrode. The gate insulator includes room temperature deposited high-K materials so as to allow said thin film transistor to operate at low operating voltage.
1. A low voltage operating thin film transistor (TFT) structure comprising:
a source electrode;
a drain electrode;
a gate electrode; and
a gate insulator that is coupled to said source electrode, drain electrode, and gate electrode, said gate insulator completely surrounds said gate electrode with room temperature deposited high-K materials so as to allow said thin film transistor to operate at low operating voltage, said gate insulator comprises amorphous or partially nanocrystalline films having at least one material selected from the group consisting of Bi 1.5 Zn 1.0 M 1.5 O 7 (M=Ta, Sb), or 0.1˜5% Ni, Mg, or Mn doped (Ba 1−x Sr x )TiO 3 at room temperature.
2. The TFT structure of claim 1 further comprising a plastic substrate such as PET, PEN, PES, or polyimide that is supported said gate electrode.
3. The TFT structure of claim 1 further comprising a semiconductor layer that is coupled to said source electrode, drain electrode and said gate insulator.
4. The TFT structure of claim 3 , wherein said semiconductor layer comprises pentacene, poly-3-alkykthiophene, poly-3-hexylthiophene (P3HT), poly-thienlylene vinylene or tetracene.
5. The TFT structure of claim 3 , wherein said semiconductor layer comprises ZnO, In 2 O 3 , TiO 2 , or SnO 2 .
6. The TFT structure of claim 3 , wherein the semiconductor layer is deposited at room temperature by RF magnetron sputtering.
7. The TFT structure of claim 1 , wherein the high-K insulator layer comprising room temperature RF sputtered inorganic films such as very thin (0.1 nm˜30 nm) MgO, YSZ (yttrium-stabilized zirconia), CeO 2 , Y 2 O 3 , Al 2 O 3 , HfO 2 , SrTiO 3 , LaAlO 3 , MgAl 2 O 4 deposited on the high-K films to manipulate threshold voltage to fabricate enhancement or depletion mode TFTs for use in CMOS application.
8. The TFT structure of claim 1 , wherein said gate electrode comprises a catalyst metal.
9. The TFT structure of claim 8 , wherein said catalyst metal comprises Poly-Si, Al, Cr, Ni, Pt, Pd, Au, ITO, TiN, or W.
10. The TFT structure of claim 8 , wherein said gate electrode is formed in a region interior of said gate dielectric.
11. The TFT structure of claim 8 , wherein said gate electrode is formed in a region exterior of said gate dielectric.
12. A method of forming a thin film transistor (TFT) structure comprising:
forming a source electrode;
forming a drain electrode;
forming a gate electrode; and
forming a gate insulator that is coupled to source electrode, drain electrode, and gate electrode, said gate insulator completely surrounds said gate electrode with room temperature deposited high-K materials so as to allow said thin film transistor to operate at low operating voltages, said gate insulator comprises amorphous or partially nano crystalline films having at least one material selected from the group consisting of Bi 1.5 Zn 1.0 M 1.5 O 7 (M=Ta, Sb), or 0.1˜5% Ni, Mg, or Mn doped (Ba 1−x Sr x )TiO 3 at room temperature.
13. The method of claim 12 further comprising providing a plastic substrate such as PET, PEN, PES, or polyimide that is supported by said gate electrode.
14. The method of claim 12 further comprising forming a semiconductor layer that is coupled to said source, drain electrode and said gate insulator.
15. The method of claim 14 , wherein said semiconductor layer comprises pentacene, poly-3-alkykthiophene, poly-3-hexylthiophene (P3HT), poly-thienlylene vinylene or tetracene.
16. The method of claim 14 , wherein said semiconductor layer comprises ZnO, In 1−x Ga x ZnO (IGZO), or SnO 2 .
17. The method of claim 12 , wherein said gate electrode comprises a catalyst metal.
18. The method of claim 17 , wherein said catalyst metal comprises Poly-Si, Al, Cr, Ni, Pt, Pd, Au, ITO, TiN, or W.
19. The method of claim 17 , wherein said gate electrode is formed in a region interior of said gate dielectric.
20. The method of claim 17 , wherein said gate electrode is formed in a region exterior of said gate dielectric.