Light-emitting diode array having an adhesive layer

1. A light-emitting diode array comprising: a substrate; an adhesive layer formed on the substrate; and a plurality of electrically connected epitaxial light-emitting stack layers disposed on the adhesive layer, each of the epitaxial light-emitting stack layers comprising a P-contact and an N-contact, wherein the P-contact and the N-contact are disposed on the same side of the epitaxial light-emitting stack layer.

2. The light-emitting diode array of claim 1 , wherein each of the epitaxial light-emitting stack layers further comprises: a first conductive semiconductor stack layer;

a light-emitting layer formed on the first conductive semiconductor stack layer; and a second conductive semiconductor stack layer formed on the light-emitting layer.

3. The light-emitting diode array of claim 1 further comprising a plurality of insulating regions formed between any two adjacent epitaxial light-emitting stack layers for electrically isolating one of these two adjacent epitaxial light-emitting stack layers from the other.

4. The light-emitting diode array of claim 1 further comprising a reflective layer formed between the substrate and the adhesive layer.

5. The light-emitting diode array of claim 1 further comprising a reflective layer formed between the adhesive layer and the epitaxial light-emitting stack layer.

6. The light-emitting diode array of claim 4 , wherein the reflective layer comprises at least one material selected from a material group consisting of Sn, Al, Au, Pt, Zn, Ge, Ag, Ti, Pb, Pd, Cu, AuBe, AuGe, Ni, PbSn, AuZn, and indium-tin oxide (ITO).

7. The light-emitting diode array of claim 5 , wherein the reflective layer comprises at least one material selected from a material group consisting of Sn, Al, Au, Pt, Zn, Ge, Ag, Ti, Pb, Pd, Cu, AuBe, AuGe, Ni, PbSn, AuZn, and indium-tin oxide (ITO).

8. The light-emitting diode array of claim 1 , wherein the substrate comprises at least one material selected from a material group consisting of GaP, GaAs, Si, SiC, AI.sub.2O.sub.3, glass, quartz, GaAsP, AIN, metal, and AlGaAs.

9. The light-emitting diode array of claim 1 , wherein the adhesive layer comprises at least one material selected from a material group consisting of polyimide (PI), benzocyclobutene (BCB), and perfluorocyclobutene (PFCB).

10. The light-emitting diode array of claim 1 , wherein the adhesive layer is a metal adhesive layer made of metal.

11. The light-emitting diode array of claim 10 further comprising an insulating layer formed between the metal adhesive layer and the epitaxial light-emitting stack layer.

12. The light-emitting diode array of claim 10 further comprising an insulating layer formed between the metal adhesive layer and the substrate.

13. A light-emitting diode array comprising: a substrate; an adhesive layer formed on the substrate, the adhesive layer comprising a top surface and a plurality of adhesive regions disposed on the top surface; a first light-emitting stack layer formed on a first adhesive region of the plurality of adhesive regions, the first light-emitting stack layer comprising a top surface, a first first-conductivity contact region formed on the top surface, and a first second-conductivity contact region formed on the top surface; a first first-conductivity conductive contact formed on the ffirst first-conductivity contact region; a first second-conductivity conductive contact formed on the first second-conductivity contact region; a second light-emitting stack layer formed on a second adhesive region of the plurality of adhesive regions, the second light-emitting stack layer comprising a top surface, a second first conductive contact region formed on the top surface, and a second second-conductivity contact region formed on the top surface; a second first-conductivity conductive contact formed on the second first-conductivity contact region; a second second-conductivity conductive contact formed on the second second-conductivity contact region; and a first conductive line for electrically connecting either of the conductive contacts of the first light-emitting stack layer to either of the conductive contacts of the second light-emitting stack layer.

14. The light-emitting diode array of claim 13 , wherein the first-conductivity contact region is n-type, and the second-conductivity contact region is p-type.

15. The light-emitting diode array of claim 13 , wherein the first light-emitting stack layer further comprises: a first first-conductivity semiconductor stack layer; a first light-emitting layer formed on the first first-conductivity semiconductor stack layer; and a first second-conductivity semiconductor stack layer formed on the first light-emitting layer.

16. The light-emitting diode array of claim 13 , wherein the second light-emitting stack layer further comprises: a second first-conductivity semiconductor stack layer; a second light-emitting layer formed on the second first-conductivity semiconductor stack layer; and a second second-conductivity semiconductor stack layer formed on the second light-emitting layer.

17. The light-emitting diode array of claim 13 further comprising a insulating region formed between the first light-emitting stack layer and the second light-emitting stack layer for electrically isolating one of these two light-emitting stack layer from the other.

18. The light-emitting diode array of claim 13 further comprising a reflective layer formed between the substrate and the adhesive layer.

19. The light-emitting diode array of claim 13 further comprising a reflective layer formed between the adhesive layer and the first light-emitting stack layer.

20. The light-emitting diode array of claim 13 further comprising a reflective layer formed between the adhesive layer and the second light-emitting stack layer.

21. The light-emitting diode array of claim 17 , wherein the reflective layer comprises at least one material selected from a material group consisting of Sn, Al, Au, Pt, Zn, Ge, Ag, Ti, Pb, Pd, Cu, AuBe, AuGe, Ni, PbSn, AuZn, and indium-tin oxide (ITO).

22. The light-emitting diode array of claim 18 , wherein the reflective layer comprises at least one material selected from a material group consisting of Sn, Al, Au, Pt, Zn, Ge, Ag, Ti, Pb, Pd, Cu, AuBe, AuGe, Ni, PbSn, AuZn, and indium-tin oxide (ITO).

23. The light-emitting diode array of claim 19 , wherein the reflective layer comprises at least one material selected from a material group consisting of Sn, Al, Au, Pt, Zn, Ge, Ag, Ti, Pb, Pd, Cu, AuBe, AuGe, Ni, PbSn, AuZn, and indium-tin oxide (ITO).

24. The light-emitting diode array of claim 13 , wherein the substrate comprises at least one material selected from a material group consisting of GaP, GaAs, Si, SiC, AI.sub.2O.sub.3, glass, quartz, GaAsP, AIN, metal, and AlGaAs.

25. The light-emitting diode array of claim 13 , wherein the adhesive layer comprises at least one material selected from a material group consisting of polyimide (PI), benzocyclobutene (BCB), and perfluorocyclobutene (PFCB).

26. The light-emitting diode array of claim 13 , wherein the adhesive layer is a metal adhesive layer made of metal.

27. The light-emitting diode array of claim 26 further comprising an insulating layer formed between the metal adhesive layer and the first light-emitting stack layer and between the metal adhesive layer and the second light-emitting stack layer.

28. The light-emitting diode array of claim 26 further comprising an insulating layer formed between the metal adhesive layer and the substrate.

29. The light-emitting diode array of claim 15 further comprising a transparent conductive layer formed between the adhesive layer and the first first-conductivity semiconductor stack layer.

30. The light-emitting diode array of claim 16 further comprising a transparent conductive layer formed between the adhesive layer and the second first-conductivity semiconductor stack layer.

31. The light-emitting diode array of claim 17 , wherein the insulating region is in the form of a trench.

32. The light-emitting diode array of claim 17 , wherein the insulating region is composed of an ion-implanted region.

33. The light-emitting diode array of claim 13 further comprising: a third light-emitting stack layer formed on a third adhesive region of the plurality of adhesive regions, the third light-emitting stack layer comprising a top surface, a third first-conductivity contact region formed on the top surface, and a third second-conductivity contact region formed on the top surface; a third first-conductivity conductive contact formed on the third first-conductivity contact region; a third second-conductivity conductive contact formed on the third second-conductivity contact region;

a fourth light-emitting stack layer formed on a fourth adhesive region of the plurality of adhesive regions, the fourth light-emitting stack layer comprising a top surface, a fourth first-conductivity contact region formed on the top surface, and a fourth second-conductivity contact region formed on the top surface; a fourth first-conductivity conductive contact formed on the fourth first-conductivity contact region; a fourth second-conductivity conductive contact formed on the fourth second-conductivity contact region; and a second conductive line for electrically connecting the first first-conductivity conductive contact to the third second-conductivity conductive contact; a third conductive line for electrically connecting the second first-conductivity conductive contact to the fourth second-conductivity conductive contact; and a fourth conductive line for electrically connecting the third first-conductivity conductive contact to the fourth first-conductivity conductive contact; wherein the first conductive line connects the first second-conductivity conductive contact to the second second-conductivity conductive contact.

34. The light-emitting diode array of claim 33 further comprising an insulating region formed between the third light-emitting stack layer and the second light-emitting stack layer for electrically isolating the third light-emitting stack layer from the second light-emitting stack layer.

35. The light-emitting diode array of claim 33 further comprising an insulating region formed between the third light-emitting stack layer and the fourth light-emitting stack layer for electrically isolating the third light-emitting stack layer from the fourth light-emitting stack layer.

36. The light-emitting diode array of claim 34 , wherein the insulating region is in the form of a trench.

37. The light-emitting diode array of claim 34 , wherein the insulating region is composed of an ion-implanted region.

38. The light-emitting diode array of claim 35 , wherein the insulating region is in the form of a trench.

39. The light-emitting diode array of claim 35 , wherein the insulating region is composed of an ion-implanted region.

40. The light-emitting diode array of claim 33 , wherein the first-conductivity contact region is n-type electro-polarization, and the second-conductivity contact region is p-type electro-polarization.

41. The light-emitting diode array of claim 33 , wherein the third light-emitting stack layer further comprises: a third first-conductivity semiconductor stack layer; a third light-emitting layer formed on the third first-conductivity semiconductor stack layer; and a third second-conductivity semiconductor stack layer formed on the third light-emitting layer.

42. The light-emitting diode array of claim 33 , wherein the fourth light-emitting stack layer further comprises: a fourth first-conductivity semiconductor stack layer; a fourth light-emitting layer formed on the fourth first-conductivity semiconductor stack layer; and a fourth second-conductivity semiconductor stack layer formed on the fourth light-emitting layer.

43. The light-emitting diode array of claim 33 further comprising a reflective layer formed between the substrate and the adhesive layer.

44. The light-emitting diode array of claim 33 further comprising a reflective layer formed between the third light-emitting stack layer and the adhesive layer.

45. The light-emitting diode array of claim 33 further comprising a reflective layer formed between the fourth light-emitting stack layer and the adhesive layer.

46. The light-emitting diode array of claim 41 further comprising a transparent conductive layer formed between the adhesive layer and the third second-conductivity semiconductor stack layer.

47. The light-emitting diode array of claim 42 further comprising a transparent conductive layer formed between the adhesive layer and the fourth second-conductivity semiconductor stack layer.