IP Library Granted Patent US 7,564,174
Granted Patent B2
US 7,564,174 · App. 11/898,359 · Granted Jul 21, 2009

Acoustic wave device and filter

Assignees: Fujitsu Media Devices Limited; Fujitsu Limited
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Quick Facts
Patent No.
US 7,564,174
App. No.
11/898,359
Granted
Jul 21, 2009
Kind
B2
Abstract

An acoustic wave device includes a piezoelectric substrate, a first dielectric film provided on the piezoelectric substrate, electrodes that are provided on the first dielectric film and excite an acoustic wave, and a second dielectric film that is provided so as to cover the electrodes and is thicker than the electrodes.

Claims (22)

1. An acoustic wave device comprising:

a piezoelectric substrate;

a first dielectric film provided on the piezoelectric substrate;

electrodes that are provided on the first dielectric film and excite an acoustic wave; and

a second dielectric film that is provided so as to cover the electrodes and is thicker than the electrodes

wherein the first dielectric film is disposed between the piezoelectric substrate and the electrodes, and

wherein a temperature coefficient of a dielectric constant of the first dielectric film is smaller than that of the piezoelectric substrate.

2. The acoustic wave device as claimed in claim 1 , further comprising a third dielectric film provided on the second dielectric film, wherein the third dielectric film has

a greater acoustic velocity than that of the second dielectric film.

3. The acoustic wave device as claimed in claim 2 , wherein the third dielectric film comprises aluminum oxide.

4. The acoustic wave device as claimed in claim 1 , wherein the second dielectric film comprises silicon oxide.

5. The acoustic wave device as claimed in claim 1 , wherein the first dielectric film comprises silicon oxide.

6. The acoustic wave device as claimed in claim 1 , wherein the first dielectric film has a relative dielectric constant greater than that of silicon oxide.

7. The acoustic wave device as claimed in claim 1 , wherein the first dielectric film comprises aluminum oxide.

8. The acoustic wave device as claimed in claim 1 , wherein the piezoelectric substrate comprises one of lithium tantalate and lithium niobate.

9. A filter comprising acoustic wave devices, at least one of the acoustic wave devices comprising:

a piezoelectric substrate;

a first dielectric film provided on the piezoelectric substrate;

electrodes that are provided on the first dielectric film and excite an acoustic wave; and

a second dielectric film that is provided so as to cover the electrodes and is thicker than the electrodes

wherein the first dielectric film is disposed between the piezoelectric substrate and the electrodes, and

wherein a temperature coefficient of a dielectric constant of the first dielectric film is smaller than that of the piezoelectric substrate.

Assignments (4)
ASSIGNMENT OF AN UNDIVIDED PARTIAL RIGHT, TITLE AND INTEREST Recorded Oct 7, 2010
From: TAIYO YUDEN MOBILE TECHNOLOGY CO., LTD.
To: TAIYO YUDEN CO., LTD.
Reel/Frame 025095/0899 →
ASSIGNMENT OF AN UNDIVIDED PARTIAL RIGHT, TITLE AND INTEREST Recorded Oct 6, 2010
From: FUJITSU MEDIA DEVICES LIMITED
To: TAIYO YUDEN MOBILE TECHNOLOGY CO., LTD.
Reel/Frame 025095/0227 →
ASSIGNMENT OF ASSIGNOR'S ENTIRE SHARE OF RIGHT, TITLE AND INTEREST Recorded May 13, 2010
From: FUJITSU LIMITED
To: TAIYO YUDEN CO., LTD.
Reel/Frame 024380/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 19, 2007
From: MATSUDA, TAKASHI; INOUE, SHOGO; MIURA, MICHIO; MATSUDA, SATORU; UEDA, MASANORI; MITOBE, SEIICHI
To: FUJITSU MEDIA DEVICES LIMITED; FUJITSU LIMITED
Reel/Frame 019987/0614 →
Priority Claims (1)
JP 2006-245596 · Sep 11, 2006 · national
Continuity (1)
Related Publication 20080061657A1 · Mar 13, 2008