Hydrogen sulfide injection method for phosphor deposition

1. A method of vacuum evaporation of a multi-element sulfur bearing thin film composition onto a substrate, the method comprising;

within a deposition chamber, providing a source of gas or vapour sulfur species targeted at one or more source materials that make up at least part of the thin film composition during evaporation of the one or more source materials, wherein said gas or vapour sulfur species is provided at a flow rate directed at the source materials to disperse the gas or vapour sulfur species across the surface of the source materials at a higher partial pressure compared to the pressure throughout said deposition chamber, and wherein there is a chemical interaction of the gas or vapour sulfur species with evaporant from said one or more source materials during deposition of said thin film composition.

2. The method of claim 1 , wherein said gas or vapour sulfur species is selected from the group consisting of hydrogen sulfide, elemental sulfur vapour, carbon disulfide, organic sulfur-bearing vapour and mixtures thereof.

3. The method of claim 2 , wherein said elemental sulfur vapour is selected from the group consisting of S, S 2 , S 3 , S 4 , S 5 , S 6 , S 7 and S 8 .

4. The method of claim 2 , wherein said organic sulfur-bearing vapour is dimethyl sulfoxide.

5. The method of claim 2 , wherein said gas or vapour sulfur species is hydrogen sulfide.

6. The method of claim 2 , wherein said gas or vapour sulfur species is provided at a flow rate of about 5 sccm to about 60 sccm.

7. The method of claim 6 , wherein said flow rate is about 20 sccm to about 60 sccm.

8. The method of claim 6 , wherein said gas or vapour sulfur species is controlled using a gas flow controller.

9. The method of claim 2 , wherein said gas or vapour sulfur species is targeted using a gas delivery tube pointed at said one or more source materials.

10. The method of claim 9 , wherein said gas delivery tube is approximately 3 cm from said one or more source materials.

11. The method of claim 2 , wherein said gas or vapour sulfur species is provided at a high temperature that is substantially equal to temperatures of said source materials.

12. The method of claim 1 , wherein said method is an electron beam evaporation method.

13. The method of claim 12 , wherein said multi-element sulfur bearing thin film composition is a thioaluminate, thiogallate or thioindate of at least one element from Groups IIA and IIB of the Periodic Table of Elements.

14. The method of claim 13 , wherein said multi-element sulfur bearing thin film composition is a europium activated barium thioaluminate.

15. The method of claim 14 , wherein said one or more source materials is selected from aluminum sulfide and/or barium sulfide.

16. The method of claim 15 , wherein said one or more source materials is aluminum sulfide.

17. A method for the deposition of a thin film of a pre-determined composition onto a substrate within a deposition chamber, the thin film comprising ternary, quaternary or higher sulfide compounds selected from the group consisting of thioaluminates, thiogallates and thioindates of at least one element from Groups IIA and IIB of the Periodic Table, the method comprising:

a) volatizing at least one source material comprising a sulfide that forms said pre-determined composition to form a sulfur-bearing thin film composition on a substrate; and

b) during step a) injecting a gas or vapour sulfur species at said at least one source material

wherein said gas or vapour sulfur species are provided at a flow rate directed at the at least one source material to disperse the gas or vapour sulfur species across the surface of the at least one source material at a high partial pressure compared to the pressure throughout said deposition chamber, and wherein there is a chemical interaction of the gas or vapour sulfur species with evaporant from said at least one source material during deposition of said thin film composition.

18. The method of claim 17 , wherein said gas or vapour sulfur species is selected from the group consisting of hydrogen sulfide, elemental sulfur vapour, carbon disulfide, organic sulfur-bearing vapour and mixtures thereof.

19. The method of claim 18 , wherein said elemental sulfur vapour is selected from the group consisting of S, S 2 , S 3 , S 4 , S 5 , S 6 , S 7 and S 8 .

20. The method of claim 19 , wherein said organic sulfur-bearing vapour is dimethyl sulfoxide.

21. The method of claim 18 , wherein said gas or vapour sulfur species is hydrogen sulfide.

22. The method of claim 18 , wherein said gas or vapour sulfur species is injected at a flow rate of about 5 sccm to about 60 sccm.

23. The method of claim 22 , wherein said flow rate is about 20 sccm to about 60 sccm.

24. The method of claim 22 , wherein said flow rate of said gas or vapour sulfur species is controlled using a gas flow controller.

25. The method of claim 18 , wherein said gas or vapour sulfur species is injected using a gas delivery tube pointed at said one or more source materials.

26. The method of claim 25 , wherein said gas delivery tube is approximately 3 cm from said one or more source materials.

27. The method of claim 18 , wherein said gas or vapour sulfur species is heated to substantially equal temperatures to said at least one source material.

28. The method of claim 18 , wherein said method is an electron beam evaporation method.

29. The method of claim 28 , wherein said multi-element sulfur bearing thin film composition is a europium activated barium thioaluminate.

30. The method of claim 18 , wherein said at least one source material is selected from aluminum sulfide and barium sulfide.

31. The method of claim 30 , wherein said at least one source material is aluminum sulfide.