Reduced metal etch rates using stripper solutions containing a copper salt
Resist stripping agents, useful for fabricating circuits and/or forming electrodes on semiconductor devices for semiconductor integrated circuits with reduced metal etch rates, particularly copper etch rates, are provided with methods for their use. The preferred stripping agents contain low concentrations of a copper or cobalt salt with or without an added amine to improve solubility of the copper or cobalt salt. Further provided are integrated circuit devices and electronic interconnect structures prepared according to these methods.
1. A method for removing a resist from a substrate comprising the acts of:
(a) providing a substrate having a resist and a metal thereon; and
(b) contacting said substrate with a composition including a stripper solution comprising:
i) a metal salt selected from the group consisting of a copper salt;
ii) dimethyl sulfoxide (DMSO)
iii) a quaternary ammonium hydroxide; and
iv) an alkanolamine.
2. The method of claim 1 , wherein said contacting includes contacting said substrate with a composition having a metal conservation factor (MCF) having a value of >0 and ≦1, said MCF being defined as:
MCF =( a−b ) /a,
where ‘a’ is an etch rate determined with said stripper solution not containing said metal salt and ‘b’ is an etch rate determined with said stripper solution containing said metal salt.
3. The method of claim 1 , wherein said contacting includes contacting said substrate with a composition including from about 0.001 wt. % to about 0.10 wt. % of a copper salt.
4. The method of claim 3 , wherein said contacting includes contacting said substrate with a composition which further includes a secondary solvent.
5. The method of claim 1 , wherein said providing a substrate includes providing a substrate wherein said resist is a photoresist.
6. The method of claim 1 , wherein said providing a substrate includes providing a substrate wherein said resist is an etch residue.
7. An integrated circuit device obtainable, in part, according to the method of claim 1 .
8. An electronic interconnect structure obtainable, in part, according to the method of claim 1 .