IP Library Granted Patent US 7,663,116
Granted Patent B2
US 7,663,116 · App. 12/368,592 · Granted Feb 16, 2010

Sensor and image pickup device

Assignees: Canon Kabushiki Kaisha; Tokyo Institute of Technology
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Quick Facts
Patent No.
US 7,663,116
App. No.
12/368,592
Granted
Feb 16, 2010
Kind
B2
Abstract

A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode.

Claims (20)

1. A sensor for detecting a received electromagnetic wave, comprising:

a first electrode;

a second electrode; and

an amorphous oxide layer interposed between the first electrode and the second electrode, wherein the amorphous oxide layer contains at least one of In, Zn or Sn, and wherein the amorphous oxide layer comprises an amorphous oxide whose electron mobility tends to increase with increasing electron carrier concentration.

2. A sensor according to claim 1 , wherein the amorphous oxide layer is a semiconductor layer comprising a metal oxide, wherein the metal is said at least one of In, Zn and Sn.

3. A sensor according to claim 1 , wherein the first electrode has transmissivity with respect to light in a wavelength range to which the amorphous oxide layer is sensitive.

4. A sensor according to claim 1 , wherein the amorphous oxide layer has an organic pigment.

5. A sensor according to claim 1 , wherein the first and second electrodes and the amorphous oxide layer are provided on a flexible substrate and wherein the amorphous oxide layer comprises an amorphous oxide whose electron mobility tends to increase with increasing electron carrier concentration.

6. A sensor according to claim 1 , wherein a plurality of amorphous oxide layers are interposed between the first electrode and the second electrode and wherein the amorphous oxide layer comprises an amorphous oxide whose electron mobility tends to increase with increasing electron carrier concentration.

7. An image pickup device comprising:

a sensor for detecting a received electromagnetic wave according to claim 1 ; and

a field effect transistor for reading a signal from said sensor.

8. An image pickup device according to claim 7 , further comprising an imaging region which includes the sensor and is non-flat.

9. An image pickup device according to claim 7 , wherein the sensor is an X-ray sensor, and the X-ray sensor includes a scintillator for converting X-ray into light, and the sensor detects the light as the electromagnetic wave.

10. An image pickup device comprising:

a sensor for detecting a received electromagnetic wave according to claim 1 ; and

a field effect transistor for reading a signal from the sensor,

wherein the field effect transistor is a normally-off transistor having an active layer composed of an amorphous oxide semiconductor.

11. An image pickup device according to claim 10 , further comprising an imaging region which includes the sensor and is non-flat.

12. An image pickup device according to claim 10 , wherein the sensor is an X-ray sensor, and the X-ray sensor includes a scintillator for converting X-ray into light, and the sensor detects the light as the electromagnetic wave.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 11, 2013
From: CANON KABUSHIKI KAISHA; TOKYO INSTITUTE OF TECHNOLOGY
To: CANON KABUSHIKI KAISHA; TOKYO INSTITUTE OF TECHNOLOGY; JAPAN SCIENCE AND TECHNOLOGY AGENCY
Reel/Frame 030776/0506 →
Priority Claims (1)
JP 2004-326681 · Nov 10, 2004 · national
Continuity (3)
Continuation 1193725900 · Nov 8, 2007
Continuation 1126964800 · Nov 9, 2005
Related Publication 20090146072A1 · Jun 11, 2009