Method of manufacturing patterned film

1. A method of manufacturing a patterned film comprising the steps of:

(a) disposing a multilayered mask containing at least one soft mask layer formed of a soft material and at least one hard mask layer formed of a hard material on one of a substrate and an electrode formed on said substrate;

(b) spraying powder formed of a brittle material toward said substrate, on which said multilayered mask has been disposed, and allowing the powder to collide with an under layer to deposit the powder thereon, thereby forming a brittle material layer; and

(c) removing said multilayered mask after step (b).

2. The method according to claim 1 , wherein said multilayered mask contains a hard mask layer as an uppermost layer.

3. The method according to claim 1 , wherein said multilayered mask contains soft mask layers and hard mask layers which are alternately stacked.

4. The method according to claim 1 , wherein the soft material includes an organic material.

5. The method according to claim 4 , wherein the soft material includes a resist.

6. The method according to claim 1 , wherein the hard material includes a metal.

7. A method of manufacturing a patterned film comprising the steps of:

(a) disposing a mask having projection on one of a substrate and an electrode formed on said substrate;

(b) spraying powder formed of a brittle material toward said substrate, on which said mask has been disposed, and allowing the powder to collide with an under layer to deposit the powder thereon, thereby forming a brittle material layer; and

(c) removing said mask after step (b).

8. The method according to claim 7 , wherein said mask contains at least two mask layers in which patterns having different sizes are formed respectively.

9. The method according to claim 7 , wherein step (a) includes the steps of:

(a1) forming a first mask layer on one of said substrate and said electrode formed on said substrate; and

(a2) disposing a second mask layer on the first mask layer such that an edge of an opening formed in the second mask layer protrudes into an opening formed in the first mask layer.

10. The method according to claim 7 , wherein step (a) includes the steps of:

(a1) forming a first mask layer on one of said substrate and said electrode formed on said substrate;

(a2) forming a second mask layer on the first mask layer; and

(a3) removing at least a part of a side surface of the first mask layer to form a projection of the second mask layer.

11. The method according to claim 10 , wherein:

step (a1) includes forming the first mask layer by employing a first material to be etched with a predetermined separation liquid;

step (a2) includes forming the second mask layer by employing a second material having a lower etching rate to the predetermined separation liquid than the first material; and

step (a3) includes etching the side surface of the first mask layer by using the separation liquid.

12. The method according to claim 10 , wherein:

step (a1) includes forming the first mask layer by employing a material which dissolves at a first temperature;

step (a2) includes forming the second mask layer by employing a material which dissolves at a second temperature higher than the first temperature; and

step (a3) includes heating said substrate at a temperature not lower than the first temperature and lower than the second temperature to dissolve only the side surface of the first mask layer.

13. The method according to claim 10 , wherein:

step (a1) includes forming the first mask layer by employing an organic material which contracts by being heated;

step (a2) includes forming the second mask layer by employing one of (i) a material having a lower coefficient of thermal contraction than that of the organic material and (ii) a material having a higher contraction start temperature than that of the organic material; and

step (a3) includes contracting the side surface of the first mask layer by heating.

14. The method according to claim 9 , wherein:

step (a1) includes forming the first mask layer by employing a soft material; and

step (a2) includes disposing the second mask layer formed by employing a hard material.

15. The method according to claim 14 , wherein the soft material includes an organic material.

16. The method according to claim 15 , wherein the soft material includes a resist.

17. The method according to claim 14 , wherein the hard material includes a metal.