Contact structure
There is disclosed a contact structure for electrically connecting conducting lines formed on a first substrate of an electrooptical device such as a liquid crystal display with conducting lines formed on a second substrate via conducting spacers while assuring a uniform cell gap among different cells if the interlayer dielectric film thickness is nonuniform across the cell or among different cells. A first conducting film and a dielectric film are deposited on the first substrate. Openings are formed in the dielectric film. A second conducting film covers the dielectric film left and the openings. The conducting spacers electrically connect the second conducting film over the first substrate with a third conducting film on the second substrate. The cell gap depends only on the size of the spacers, which maintain the cell gap.
1. An active matrix display device comprising:
a pixel region formed over a substrate, the pixel region comprising a thin film transistor and a pixel electrode electrically connected to the thin film transistor;
a scanning line driver circuit connected to the pixel region;
an extractor terminal including a common terminal and a contact hole formed over the substrate wherein the common terminal is formed from a same layer as the pixel electrode;
a first internal conducting line and a gate electrode of the thin film transistor created by a first processing step, the first internal conducting line electrically connected to the common terminal in the contact hole;
a second internal conducting line and a source electrode and a drain electrode of the thin film transistor created by a second processing step; and
a counter electrode covering the pixel region,
wherein the common terminal is electrically connected to the counter electrode through the second internal conducting line,
wherein the scanning line driver circuit is located between the second internal conducting line and the pixel region.
2. The active matrix display device according to claim 1 ,
wherein the wiring is formed over the substrate.
3. The active matrix display device according to claim 1 ,
wherein the scanning line driver circuit is formed over the substrate.
4. An active matrix display device comprising:
a pixel region formed over a substrate, the pixel region comprising a thin film transistor and a pixel electrode electrically connected to the thin film transistor;
a scanning line driver circuit connected to the pixel region;
an extractor terminal including a common terminal and a contact hole formed over the substrate wherein the common terminal is formed from a same layer as the pixel electrode
a first internal conducting line and a gate electrode of the thin film transistor created by a first processing step, the first internal conducting line electrically connected to the common terminal in the contact hole;
a second internal conducting line and a source electrode and a drain electrode of the thin film transistor created by a second processing step;
at least one common contact portion formed adjacent to the pixel region; and
a counter electrode covering the pixel region,
wherein the common terminal is electrically connected to the counter electrode through the second internal conducting line and the common contact portion,
wherein the scanning line driver circuit is located between the second internal conducting line and the pixel region.
5. The active matrix display device according to claim 4 ,
wherein the wiring is formed over the substrate.
6. The active matrix display device according to claim 4 ,
wherein the scanning line driver circuit is formed over the substrate.
7. An active matrix display device comprising:
a pixel region over a substrate including a thin film transistor and a pixel electrode electrically connected to the thin film transistor;
an extractor terminal including a common terminal formed over the substrate;
a first internal conducting line and a gate electrode of the thin film transistor created by a first processing step, the first internal conducting line electrically connected to the common terminal;
a second internal conducting line and a source electrode and a drain electrode of the thin film transistor created by a second processing step; and
a counter electrode covering the pixel region,
wherein the common terminal is electrically connected to the counter electrode through at least the second internal conducting line.
8. The active matrix display device according to claim 7 , wherein the thin film transistor is a top-gate thin film transistor.
9. The active matrix display device according to claim 7 , wherein the thin film transistor is a bottom-gate thin film transistor.
10. The active matrix display device according to claim 7 , wherein the pixel electrode is made of a transparent film.
11. An active matrix display device comprising:
a pixel region over a substrate including a thin film transistor and a pixel electrode electrically connected to the thin film transistor;
at least one common contact portion formed adjacent to the pixel region;
an extractor terminal including a common terminal formed over the substrate;
a first internal conducting line and a gate electrode of the thin film transistor created by a first processing step, the first internal conducting line electrically connected to the common terminal;
a second internal conducting line and a source electrode and a drain electrode of the thin film transistor created by a second processing step; and
a counter electrode covering the pixel region,
wherein the common terminal is electrically connected to the counter electrode through at least the second internal conducting line and the common contact portion.
12. The active matrix display device according to claim 11 , wherein the thin film transistor is a top-gate thin film transistor.
13. The active matrix display device according to claim 11 , wherein the thin film transistor is a bottom-gate thin film transistor.
14. The active matrix display device according to claim 11 , wherein the pixel electrode is made of a transparent film.
15. An active matrix display device comprising:
a pixel region over a substrate including a thin film transistor and a pixel electrode electrically connected to the thin film transistor;
an extractor terminal including a common terminal and a contact hole formed over the substrate wherein the common terminal is formed from a same layer as the pixel electrode;
a first internal conducting line electrically connected to the common terminal in the contact hole wherein the first internal conducting line and a gate electrode of the thin film transistor are created by a first processing step;
a second internal conducting line and a source electrode and a drain electrode of the thin film transistor created by a second processing step;
a counter electrode covering the pixel region,
wherein the common terminal is electrically connected to the counter electrode through at least the second internal conducting line.
16. The active matrix display device according to claim 15 , wherein the thin film transistor is a top-gate thin film transistor.
17. The active matrix display device according to claim 15 , wherein the thin film transistor is a bottom-gate thin film transistor.
18. The active matrix display device according to claim 15 , wherein the pixel electrode is made of a transparent film.
19. An active matrix display device comprising:
a pixel region over a substrate including a thin film transistor and a pixel electrode electrically connected to the thin film transistor;
an extractor terminal including a common terminal formed over the substrate;
a first internal conducting line and a gate electrode of the thin film transistor created by a first processing step, the first internal conducting line electrically connected to the common terminal;
a second internal conducting line and a source electrode and a drain electrode of the thin film transistor created by a second processing step; and
a counter electrode covering the pixel region,
wherein the second internal conducting line extends along at least a first edge of the substrate,
wherein the first internal conducting line extends along at least a second edge of the substrate, the second edge being opposed to the extractor terminals and being perpendicular to the first edge, and
wherein the common terminal is electrically connected to the counter electrode through at least the second internal conducting line.
20. The active matrix display device according to claim 19 , wherein the thin film transistor is a top-gate thin film transistor.
21. The active matrix display device according to claim 19 , wherein the thin film transistor is a bottom-gate thin film transistor.
22. The active matrix display device according to claim 19 , wherein the pixel electrode is made of a transparent film.
23. An active matrix display device comprising:
a pixel region over a substrate including a thin film transistor and a pixel electrode electrically connected to the thin film transistor;
at least one common contact portion formed adjacent to the pixel region;
an extractor terminal including a common terminal formed over the substrate;
a first internal conducting line and a gate electrode of the thin film transistor created by a first processing step, the first internal conducting line electrically connected to the common terminal;
a second internal conducting line and a source electrode and a drain electrode of the thin film transistor created by a second processing step; and
a counter electrode covering the pixel region,
wherein the second internal conducting line extends along at least a first edge of the substrate,
wherein the first internal conducting line extends along at least a second edge of the substrate, the second edge being opposed to the extractor terminals and being perpendicular to the first edge, and
wherein the common terminal is electrically connected to the counter electrode through at least the second internal conducting line and the common contact portion.
24. The active matrix display device according to claim 23 , wherein the thin film transistor is a top-gate thin film transistor.
25. The active matrix display device according to claim 23 , wherein the thin film transistor is a bottom-gate thin film transistor.
26. The active matrix display device according to claim 23 , wherein the pixel electrode is made of a transparent film.
27. An active matrix display device comprising:
a pixel region over a substrate including a thin film transistor and a pixel electrode electrically connected to the thin film transistor;
an extractor terminal including a common terminal and a contact hole formed over the substrate wherein the common terminal is formed from a same layer as the pixel electrode;
a first internal conducting line electrically connected to the common terminal in the contact hole wherein the first internal conducting line and a gate electrode of the thin film transistor are created by a first processing step;
a second internal conducting line and a source electrode and a drain electrode of the thin film transistor created by a second processing step;
a counter electrode covering the pixel region,
wherein the second internal conducting line extends along at least a first edge of the substrate,
wherein the first internal conducting line extends along at least a second edge of the substrate, the second edge being opposed to the extractor terminals and being perpendicular to the first edge, and
wherein the common terminal is electrically connected to the counter electrode through the first internal conducting line.
28. The active matrix display device according to claim 27 , wherein the thin film transistor is a top-gate thin film transistor.
29. The active matrix display device according to claim 27 , wherein the thin film transistor is a bottom thin film transistor.
30. The active matrix display device according to claim 27 , wherein the pixel electrode is made of a transparent film.
31. An active matrix display device comprising:
a pixel region over a substrate including a thin film transistor and a pixel electrode electrically connected to the thin film transistor;
an extractor terminal including a common terminal formed over the substrate;
a first internal conducting line and a gate electrode of the thin film transistor created by a first processing step, the first internal conducting line electrically connected to the common terminal;
a second internal conducting line and a source electrode and a drain electrode of the thin film transistor created by a second processing step;
a third internal conducting line formed from a same layer as the source electrode and the drain electrode of the thin film transistor, the third internal conducting line electrically connected to the first internal conducting line, and the third internal conducting line electrically connected to the common terminal;
a counter electrode covering the pixel region,
wherein the second internal conducting line extends along at least a first edge of the substrate,
wherein the first internal conducting line extends along at least a second edge of the substrate, the second edge being opposed to the extractor terminals and being perpendicular to the first edge,
wherein the third internal conducting line extends along at least a third edge of the substrate, the third edge being opposed to the first edge and being perpendicular to the second edge and the extractor terminals,
wherein the common terminal is electrically connected to the counter electrode through at least the second internal conducting line.
32. The active matrix display device according to claim 31 , wherein the thin film transistor is a top-gate thin film transistor.
33. The active matrix display device according to claim 31 , wherein the thin film transistor is a bottom-gate thin film transistor.
34. The active matrix display device according to claim 31 , wherein the pixel electrode is made of a transparent film.
35. An active matrix display device comprising:
a pixel region over a substrate including a thin film transistor and a pixel electrode electrically connected to the thin film transistor;
at least one common contact portion formed adjacent to the pixel region;
an extractor terminal including a common terminal formed over the substrate;
a first internal conducting line and a gate electrode of the thin film transistor created by a first processing step, the first internal conducting line electrically connected to the common terminal;
a second internal conducting line and a source electrode and a drain electrode of the thin film transistor created by a second processing step;
a third internal conducting line formed from a same layer as the source electrode and the drain electrode of the thin film transistor, the third internal conducting line electrically connected to the first internal conducting line, and the third internal conducting line electrically connected to the common terminal;
a counter electrode covering the pixel region,
wherein the second internal conducting line extends along at least a first edge of the substrate,
wherein the first internal conducting line extends along at least a second edge of the substrate, the second edge being opposed to the extractor terminals and being perpendicular to the first edge,
wherein the third internal conducting line extends along at least a third edge of the substrate, the third edge being opposed to the first edge and being perpendicular to the second edge and the extractor terminals,
wherein the common terminal is electrically connected to the counter electrode through at least the second internal conducting line and the common contact portion.
36. The active matrix display device according to claim 35 , wherein the thin film transistor is a top-gate thin film transistor.
37. The active matrix display device according to claim 35 , wherein the thin film transistor is a bottom-gate thin film transistor.
38. The active matrix display device according to claim 35 , wherein the pixel electrode is made of a transparent film.
39. An active matrix display device comprising:
a pixel region over a substrate including a thin film transistor and a pixel electrode electrically connected to the thin film transistor;
an extractor terminal including a common terminal and a contact hole formed over the substrate wherein the common terminal is formed from a same layer as the pixel electrode;
a first internal conducting line electrically connected to the common terminal in the contact hole and a gate electrode of the thin film transistor created by a first processing step, the first internal conducting line electrically connected to the common terminal;
a second internal conducting line and a source electrode and a drain electrode of the thin film transistor created by a second processing step;
a third internal conducting line formed from a same layer as the source electrode and the drain electrode of the thin film transistor, the third internal conducting line electrically connected to the first internal conducting line, and the third internal conducting line electrically connected to the common terminal;
a counter electrode covering the pixel region,
wherein the second internal conducting line extends along at least a first edge of the substrate,
wherein the first internal conducting line extends along at least a second edge of the substrate, the second edge being opposed to the extractor terminals and being perpendicular to the first edge,
wherein the third internal conducting line extends along at least a third edge of the substrate, the third edge being opposed to the first edge and being perpendicular to the second edge and the extractor terminals,
wherein the common terminal is electrically connected to the counter electrode through at least the second internal conducting line.
40. The active matrix display device according to claim 39 , wherein the thin film transistor is a top-gate thin film transistor.
41. The active matrix display device according to claim 39 , wherein the thin film transistor is a bottom-gate thin film transistor.
42. The active matrix display device according to claim 39 , wherein the pixel electrode is made of a transparent film.