Active semiconductor devices
Apparatus including a support body; an organic semiconductor composition body on the support body, —and a first body including a hydrogenated vinylaromatic-diene block copolymer on the organic semiconductor composition body. Apparatus including a support body, —a first body including a hydrogenated vinylaromatic-diene block copolymer on the support body; and an organic semiconductor composition body on the first body. Techniques for making an apparatus.
1. An apparatus comprising: a support body; an organic semiconductor composition body on said support body; and a first body consisting essentially of a hydrogenated vinylaromatic-diene block copolymer on said organic semiconductor composition body.
2. The apparatus of claim 1 , further including; a second organic dielectric composition body on said first body.
3. An apparatus consisting essentially of: a support body; a first body comprising a hydrogenated vinylaromatic-diene block copolymer on said support body; an organic semiconductor composition body on said first body, and a second organic dielectric composition body is interposed between the support body and the first body.
4. The apparatus of claim 1 , wherein the vinylaromatic-diene block copolymer includes styrene and butadiene.
5. The apparatus of claim 1 , wherein the vinylaromatic-diene block copolymer includes styrene and butadiene.
6. The apparatus of claim 1 , wherein the first body has a dielectric constant within a range between about 1.1 and about 3.0.
7. The apparatus of claim 2 , wherein the second organic dielectric composition body has a dielectric constant of at least about 3.0.
8. The apparatus of claim 3 , wherein the first body has a dielectric constant within a range between about 1.1 and about 3.0.
9. The apparatus of claim 3 , wherein the second organic dielectric composition body has a dielectric constant of at least about 3.0.
10. The apparatus of claim 1 , wherein a degree of hydrogenation of diene moieties of the block copolymer is at least about 97%; and a degree of hydrogenation of vinylaromatic moieties of the block copolymer is at least about 90%.
11. The apparatus of claim 3 , wherein a degree of hydrogenation of diene moieties of the block copolymer is at least about 97%; and a degree of hydrogenation of vinylaromatic moieties of the block copolymer is at least about 90%.
12. The apparatus of claim 4 , wherein the first body has a dielectric constant within a range between about 1.1 and about 3.0 and the second organic dielectric composition body has a dielectric constant of at least about 3.0.
13. The apparatus of claim 5 , wherein the first body has a dielectric constant within a range between about 1.1 and about 3.0 and the second organic dielectric composition body has a dielectric constant of at least about 3.0.
14. The apparatus of claim 12 , wherein a degree of hydrogenation of diene moieties of the block copolymer is at least about 97%; and a degree of hydrogenation of vinylaromatic moieties of the block copolymer is at least about 90%.
15. The apparatus of claim 13 , wherein a degree of hydrogenation of diene moieties of the block copolymer is at least about 97%; and a degree of hydrogenation of vinylaromatic moieties of the Hock copolymer is at least about 90%.
16. An apparatus comprising: a support body; an organic semiconductor composition body on said support body; and a first body comprising a hydrogenated vinylaromatic-diene block copolymer on said organic semiconductor composition body, and wherein the hydrogenated vinylaromatic-diene block copolymer is mobilized in at least one n-alkane having between about 4 and about 12 carbon atoms.
17. An apparatus comprising: a support body; an organic semiconductor composition body on said support body; and a first body comprising a hydrogenated vinylaromatic-diene block copolymer on said organic semiconductor composition body, wherein the hydrogenated vinylaromatic-diene block copolymer is comprised of at least 75% by weight styrene.
18. The apparatus of claim 1 , wherein the first body consists of a hydrogenated vinylaromatic-diene block copolymer on said organic semiconductor composition body.
19. The apparatus of claim 1 , wherein the hydrogenated vinylaromatic-diene block copolymer is comprised of at least 75% by weight styrene.
20. The apparatus of claim 1 , wherein the hydrogenated vinylaromatic-diene block copolymer is comprised of at least 90% by weight styrene and butadiene.
21. The apparatus of claim 1 , wherein the hydrogenated vinylaromatic-diene block copolymer is comprised of at least 95% by weight styrene and butadiene.