IP Library Granted Patent US 7,732,915
Granted Patent B2
US 7,732,915 · App. 11/526,884 · Granted Jun 8, 2010

Semiconductor sensor device with sensor chip and method for producing the same

Assignee: Infineon Technologies AG
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Quick Facts
Patent No.
US 7,732,915
App. No.
11/526,884
Granted
Jun 8, 2010
Kind
B2
Abstract

A semiconductor sensor device includes a sensor chip. The sensor chip includes a sensor region and contact areas on its upper side and is further arranged in a cavity housing. The cavity housing includes side walls, a housing bottom, a cavity, external contacts on the outside of the cavity and contact pads on an upper side of the housing bottom facing the cavity. The sensor chip is embedded into a rubber-elastic plastic composition within the cavity of the cavity housing such that the sensor region of the sensor chip faces the housing bottom and the contact areas of the sensor chip are electrically connected to the contact pads on the housing bottom via elastic flip-chip contacts.

Claims (21)

1. A semiconductor sensor device, comprising:

a sensor chip including a sensor region and contact areas disposed on an upper side of the sensor chip;

a cavity housing comprising side walls, a housing bottom and a cavity disposed between the side walls and housing bottom;

a leadframe comprising external contacts disposed outside the cavity of the cavity housing, wherein the external contacts comprise external flat conductors arranged on an underside of the housing bottom, the leadframe further comprising contact pads disposed on an upper side of the housing bottom facing the cavity, the contact pads being electrically connected to the external contacts via through contacts, wherein the external flat conductors comprise external contact areas that undergo a transition from the underside of the housing bottom to the through contacts that extend through the housing bottom and that undergo a further transition from the through contacts to the contact pads;

elastic flip-chip contacts; and

a rubber-elastic plastic composition disposed within the cavity, wherein the sensor chip is at least partly embedded in the rubber-elastic plastic composition, the sensor region is arranged facing the housing bottom, the contact areas are electrically connected to the elastic flip-chip contacts, the elastic flip-chip contacts are electrically connected to the contact pads, and the rubber-elastic plastic composition includes a section that is disposed over the sensor region and has a thickness that is defined between the upper side of the sensor chip and the upper side of the housing bottom.

2. The semiconductor sensor device of claim 1 , wherein the housing bottom comprises at least one housing bottom opening.

3. The semiconductor sensor device of claim 1 , wherein each elastic flip-chip contact comprises a rubber-elastic plastic hump and a conduction path, the conduction path being arranged on the rubber-elastic plastic hump extending from a base of the hump to a hump peak.

4. The semiconductor sensor device of claim 1 , wherein the elastic flip-chip contacts comprise spring-elastic bonding wires.

5. The semiconductor sensor device of claim 1 , wherein the elastic flip-chip contacts comprise electrodeposited elastic fibers.

6. The semiconductor sensor device of claim 2 , wherein an areal extent of the housing bottom opening is dimensioned to an area of the sensor region.

7. The semiconductor sensor device of claim 1 , wherein the housing bottom comprises a plurality of housing bottom openings operatively connected to the sensor region of the sensor chip via the rubber-elastic plastic composition.

8. The semiconductor sensor device of claim 1 , wherein the rubber-elastic plastic composition comprises a silicone gel.

9. The semiconductor sensor device of claim 1 , wherein the rubber-elastic plastic composition is optically transparent.

10. The semiconductor sensor device of claim 1 , wherein a uniformly thick layer of the rubber-elastic plastic composition is arranged between the upper side of the housing bottom and the sensor region.

11. The semiconductor sensor device of claim 10 , wherein the side walls form an injection-molding frame comprising a filled plastic housing composition.

12. The semiconductor sensor device of claim 1 , wherein the elastic flip-chip contacts are embedded within the rubber-elastic plastic composition.

13. The semiconductor sensor device of claim 1 , wherein the section of the rubber-elastic plastic composition that is disposed over the sensor region has a thickness defined between the upper side of the sensor chip and the upper side of the housing bottom that enhances sensitivity of the sensor chip.

14. The semiconductor sensor device of claim 1 , wherein the rubber-elastic plastic composition is filled within the housing cavity so as to cover the upper side of the sensor chip and also at least a majority of edge sides that extend between the upper side and a side opposing the upper side of the sensor chip.

15. The semiconductor sensor device of claim 1 , wherein the sensor chip is completely embedded within the rubber-elastic plastic composition such that the upper side and a side opposing the upper side of the sensor chip are covered with the rubber-elastic plastic composition.

16. The semiconductor sensor device of claim 1 , wherein the elastic flip-chip contacts comprise bonding wires that extend between the contact areas of the sensor chip and the contact pads of the leadframe, and the bonding wires are bent and have an S shape.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 20, 2006
From: DANGELMAIER, JOCHEN; THEUSS, HORST
To: INFINEON TECHNOLOGIES AG
Reel/Frame 018536/0630 →
Priority Claims (1)
DE 10 2005 046 008 · Sep 26, 2005 · national
Continuity (1)
Related Publication 20070069354A1 · Mar 29, 2007